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  4. 中科院固体物理研究所
Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation

文献类型：期刊论文

作者Gao, J.1,2; He, G.1; Fang, Z. B.3; Lv, J. G.4; Liu, M.5; Sun, Z. Q.1
刊名JOURNAL OF ALLOYS AND COMPOUNDS
出版日期2017-02-25
卷号695期号:无页码:2199-2206
关键词High-k Gate Dielectrics Interface Quality Band Alignment Electrical Properties Leakage Current Mechanism
DOI10.1016/j.jallcom.2016.11.068
文献子类Article
英文摘要Effects of nitrogen incorporation on the interfacial chemical bonding states, band alignment, electrical properties and leakage current conduction mechanisms of HfGdO-based metal-oxide-semiconductor (MOS) capacitors has been investigated by UV-Vis transmission spectroscopy, X-ray photoemission spectroscopy (XPS), and electrical measurements. XPS results indicate that incorporation of a moderate amount of nitrogen incorporation into HfGdO gate dielectrics can effectively suppress the formation of low-k GeO2 and Hf(Gd)-Ge-O interfacial layer at the interfacial region. Meanwhile, reduction in band gap and valence band offset and increase in conduction band offset have been observed after nitrogen incorporation. Electrical measurements based on MOS capacitors have shown that MOS capacitor with HfGdON/ Ge stacked gate dielectric with N-2 flow rate of 3 sccm exhibits small gate leakage current (1.08 x 10(-3) A/cm(2) at V-g = 1 V), almost disappeared hysteresis, and large dielectric constant (29.2). The involved leakage current conduction mechanisms for MOS capacitor devices with and without nitrogen incorporation also have been discussed in detail. (C) 2016 Elsevier B. V. All rights reserved.
WOS关键词OXIDES ; DIELECTRICS ; TRANSISTORS ; DEPENDENCE ; CHEMISTRY ; HFO2
WOS研究方向Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
语种英语
WOS记录号WOS:000391817600277
资助机构National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; 51272159 ; 51272159 ; 51272159 ; 51272159 ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 51502005) ; 51502005) ; 51502005) ; 51502005) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; 51272159 ; 51272159 ; 51272159 ; 51272159 ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 51502005) ; 51502005) ; 51502005) ; 51502005)
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/32784]  
专题合肥物质科学研究院_中科院固体物理研究所
作者单位1.Anhui Univ, Sch Phys & Mat Sci, Radiat Detect Mat & Devices Lab, Hefei 230039, Peoples R China
2.Anhui Univ Sci & Technol, Sch Sci, Huainan 232001, Peoples R China
3.Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China
4.Hefei Normal Univ, Dept Phys & Elect Engn, Hefei 230061, Peoples R China
5.Chinese Acad Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanostruct, Key Lab Mat Phys, Hefei 230031, Peoples R China
推荐引用方式
GB/T 7714		 Gao, J.,He, G.,Fang, Z. B.,et al. Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2017,695(无):2199-2206.
APA Gao, J.,He, G.,Fang, Z. B.,Lv, J. G.,Liu, M.,&Sun, Z. Q..(2017).Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation.JOURNAL OF ALLOYS AND COMPOUNDS,695(无),2199-2206.
MLA Gao, J.,et al."Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation".JOURNAL OF ALLOYS AND COMPOUNDS 695.无(2017):2199-2206.

入库方式： OAI收割

来源：合肥物质科学研究院

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