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Unipolar resistive switching behavior of amorphous SrMoO4 thin films deposited at room temperature

文献类型：期刊论文

作者Hu, L.1; Lin, G. T.1; Wei, R. H.1; Luo, X.1; Tang, X. W.1; Zhu, X. B.1; Song, W. H.1; Dai, J. M.1; Sun, Y. P.1,2,3
刊名CERAMICS INTERNATIONAL
出版日期2017-02-15
卷号43期号:3页码:3177-3182
关键词Resistive Random Access Memory Resistive Switching Conducting Filament Molybdate Thin Film
DOI10.1016/j.ceramint.2016.11.139
文献子类Article
英文摘要Amorphous SrMoO4 (SMO) thin films were deposited on Pt/Ti/SiO2/Si substrates at room temperature by pulsed laser deposition and the resistive switching (RS) behavior of the Au/SMO/Pt devices was investigated. The Au/SMO/Pt devices exhibit typical unipolar RS behavior with excellent switching parameters as follows: high resistance ratio (similar to 10(5)) between the low resistance state (LRS) and high resistance state (HRS), non overlapping switching voltages, and good endurance and retention characteristics. Detailed analysis of their current-voltage characteristics reveals that the conduction mechanisms are Ohmic conduction in the LRS and lower voltage region of HRS, and Poole-Frenkel emission in the higher voltage region of the HRS. Temperature dependent resistance measurements, combined with x-ray photoelectron spectroscopy and model analysis indicate that the unipolar RS behavior of the Au/SMO/Pt devices could be understood by a conical conducting filaments (CFs) model in which the conical CFs are composed of oxygen vacancies. The conical CFs extend from the cathode to anode during the forming process and the observed RS behavior occurs in the localized region near the anode. These results suggest that the room-temperature- deposited amorphous SMO thin films could find potential application in nonvolatile RS memory.
WOS关键词MEMORY ; RESISTANCE
WOS研究方向Materials Science
语种英语
WOS记录号WOS:000392769600038
资助机构National Natural Science Foundation of China(U1532149 ; National Natural Science Foundation of China(U1532149 ; National Natural Science Foundation of China(U1532149 ; National Natural Science Foundation of China(U1532149 ; National Natural Science Foundation of China(U1532149 ; National Natural Science Foundation of China(U1532149 ; National Natural Science Foundation of China(U1532149 ; National Natural Science Foundation of China(U1532149 ; Chinese Academy of Sciences' Large-Scale Scientific Facility(U1532149) ; Chinese Academy of Sciences' Large-Scale Scientific Facility(U1532149) ; Chinese Academy of Sciences' Large-Scale Scientific Facility(U1532149) ; Chinese Academy of Sciences' Large-Scale Scientific Facility(U1532149) ; Chinese Academy of Sciences' Large-Scale Scientific Facility(U1532149) ; Chinese Academy of Sciences' Large-Scale Scientific Facility(U1532149) ; Chinese Academy of Sciences' Large-Scale Scientific Facility(U1532149) ; Chinese Academy of Sciences' Large-Scale Scientific Facility(U1532149) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; 11104273) ; 11104273) ; 11104273) ; 11104273) ; 11104273) ; 11104273) ; 11104273) ; 11104273) ; National Natural Science Foundation of China(U1532149 ; National Natural Science Foundation of China(U1532149 ; National Natural Science Foundation of China(U1532149 ; National Natural Science Foundation of China(U1532149 ; National Natural Science Foundation of China(U1532149 ; National Natural Science Foundation of China(U1532149 ; National Natural Science Foundation of China(U1532149 ; National Natural Science Foundation of China(U1532149 ; Chinese Academy of Sciences' Large-Scale Scientific Facility(U1532149) ; Chinese Academy of Sciences' Large-Scale Scientific Facility(U1532149) ; Chinese Academy of Sciences' Large-Scale Scientific Facility(U1532149) ; Chinese Academy of Sciences' Large-Scale Scientific Facility(U1532149) ; Chinese Academy of Sciences' Large-Scale Scientific Facility(U1532149) ; Chinese Academy of Sciences' Large-Scale Scientific Facility(U1532149) ; Chinese Academy of Sciences' Large-Scale Scientific Facility(U1532149) ; Chinese Academy of Sciences' Large-Scale Scientific Facility(U1532149) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; 11104273) ; 11104273) ; 11104273) ; 11104273) ; 11104273) ; 11104273) ; 11104273) ; 11104273)
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/32812]  
专题合肥物质科学研究院_中科院固体物理研究所
作者单位1.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
2.Chinese Acad Sci, High Field Magnet Lab, Hefei 230031, Peoples R China
3.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China
推荐引用方式
GB/T 7714		 Hu, L.,Lin, G. T.,Wei, R. H.,et al. Unipolar resistive switching behavior of amorphous SrMoO4 thin films deposited at room temperature[J]. CERAMICS INTERNATIONAL,2017,43(3):3177-3182.
APA Hu, L..,Lin, G. T..,Wei, R. H..,Luo, X..,Tang, X. W..,...&Sun, Y. P..(2017).Unipolar resistive switching behavior of amorphous SrMoO4 thin films deposited at room temperature.CERAMICS INTERNATIONAL,43(3),3177-3182.
MLA Hu, L.,et al."Unipolar resistive switching behavior of amorphous SrMoO4 thin films deposited at room temperature".CERAMICS INTERNATIONAL 43.3(2017):3177-3182.

入库方式： OAI收割

来源：合肥物质科学研究院

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