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  4. 中科院固体物理研究所
Interfacial modulation and electrical properties improvement of solution-processed ZrO2 gate dielectrics upon Gd incorporation

文献类型：期刊论文

作者Xiao, D. Q.1; He, G.1; Lv, J. G.2; Wang, P. H.1; Liu, M.3; Gao, J.1; Jin, P.1; Jiang, S. S.1; Li, W. D.1; Sun, Z. Q.1
刊名JOURNAL OF ALLOYS AND COMPOUNDS
出版日期2017-03-30
卷号699期号:无页码:415-420
关键词High-k Gate Dielectrics Gd Incorporation Xps Electrical Properties Sol-gel
DOI10.1016/j.jallcom.2016.12.376
文献子类Article
英文摘要In this work, the band gap, interfacial properties and electrical properties of Gd doped ZrO2 high-k gate dielectric films deposited by solution method have been systematically investigated. Results have shown that Gd doping can increase band gap energy from 5.65 to 5.92 eV and effectively restrain the formation of low-k SiOx interfacial layer between dielectric and Si substrate. Moreover, the conduction band offset is increased from 2.57 to 3.06 eV by Gd doping, which effectively reduces the leakage current density to 1.8 x 10(-6) A/cm(2). (C) 2016 Elsevier B.V. All rights reserved.
WOS关键词THIN-FILM TRANSISTORS ; HIGH-PERFORMANCE ; LOW-TEMPERATURE ; HYBRID FILMS ; FABRICATION ; DEPOSITION ; CONSTANT ; OXIDES ; STACK ; HFO2
WOS研究方向Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
语种英语
WOS记录号WOS:000393727500057
资助机构National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; Technology Foundation for Selected Overseas Chinese Scholar ; Technology Foundation for Selected Overseas Chinese Scholar ; Technology Foundation for Selected Overseas Chinese Scholar ; Technology Foundation for Selected Overseas Chinese Scholar ; Ministry of Personnel of China(J05015131) ; Ministry of Personnel of China(J05015131) ; Ministry of Personnel of China(J05015131) ; Ministry of Personnel of China(J05015131) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; Technology Foundation for Selected Overseas Chinese Scholar ; Technology Foundation for Selected Overseas Chinese Scholar ; Technology Foundation for Selected Overseas Chinese Scholar ; Technology Foundation for Selected Overseas Chinese Scholar ; Ministry of Personnel of China(J05015131) ; Ministry of Personnel of China(J05015131) ; Ministry of Personnel of China(J05015131) ; Ministry of Personnel of China(J05015131) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; 11474284) ; 11474284) ; 11474284) ; 11474284)
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/32821]  
专题合肥物质科学研究院_中科院固体物理研究所
作者单位1.Anhui Univ, Radiat Detect Mat & Devices Lab, Sch Phys & Mat Sci, Hefei 230601, Peoples R China
2.Hefei Normal Univ, Dept Phys & Elect Engn, Hefei 230061, Peoples R China
3.Chinese Acad Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanostruct, Key Lab Mat Phys, Hefei 230031, Peoples R China
推荐引用方式
GB/T 7714		 Xiao, D. Q.,He, G.,Lv, J. G.,et al. Interfacial modulation and electrical properties improvement of solution-processed ZrO2 gate dielectrics upon Gd incorporation[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2017,699(无):415-420.
APA Xiao, D. Q..,He, G..,Lv, J. G..,Wang, P. H..,Liu, M..,...&Sun, Z. Q..(2017).Interfacial modulation and electrical properties improvement of solution-processed ZrO2 gate dielectrics upon Gd incorporation.JOURNAL OF ALLOYS AND COMPOUNDS,699(无),415-420.
MLA Xiao, D. Q.,et al."Interfacial modulation and electrical properties improvement of solution-processed ZrO2 gate dielectrics upon Gd incorporation".JOURNAL OF ALLOYS AND COMPOUNDS 699.无(2017):415-420.

入库方式： OAI收割

来源：合肥物质科学研究院

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