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Electric-Field-Driven Dual Vacancies Evolution in Ultrathin Nanosheets Realizing Reversible Semiconductor to Half-Metal Transition

文献类型：期刊论文

作者Lyu, Mengjie1; Liu, Youwen1; Zhi, Yuduo1; Xiao, Chong1; Gu, Bingchuan2; Hua, Xuemin1; Fan, Shaojuan2; Lin, Yue1; Bai, Wei1; Tong, Wei3
刊名JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
出版日期2015-12-02
卷号137期号:47页码:15043-15048
DOI10.1021/jacs.5b10212
文献子类Article
英文摘要Fabricating a flexible room-temperature ferromagnetic resistive-switching random access memory (REAM) device is of fundamental importance to integrate nonvolatile memory and spintronics both in theory and practice for modern information technology and has the potential to bring about revolutionary new foldable information-storage devices. Here, we show that a relatively low operating voltage (+1.4 V/1.5 V, the corresponding electric field is around 20 000 V/cm) drives the dual vacancies evolution in ultrathin SnO2 nanosheets at room temperature, which causes the reversible transition between semiconductor and half-metal, accompanyied by an abrupt conductivity change up to 103 times, exhibiting room-temperature ferromagnetism in two resistance states. Positron annihilation spectroscopy and electron spin resonance results show that the Sn/O dual vacancies in the ultrathin SnO2 nanosheets evolve to isolated Sn vacancy under electric field, accounting for the switching behavior of SnO2 ultrathin nanosheets; on the other hand, the different defect types correspond to different conduction natures, realizing the transition between semiconductor and half-metal. Our result represents a crucial step to create new a information-storage device realizing the reversible transition between semiconductor and half-metal with flexibility and room-temperature ferromagnetism at low energy consumption. The as-obtained half-metal in the low-resistance state broadens the application of the device in spintronics and the semiconductor to half-metal transition on the basis of defects evolution and also opens up a new avenue for exploring random access memory mechanisms and finding new half-metals for spintronics.
WOS关键词MEMORY DEVICES ; GRAPHENE ; SPINTRONICS ; OPPORTUNITIES ; ELECTRONICS ; FABRICATION ; SWITCHES ; FUTURE ; SNO2
WOS研究方向Chemistry
语种英语
WOS记录号WOS:000365930600030
资助机构National Basic Research Program of China(2015CB932302) ; National Basic Research Program of China(2015CB932302) ; National Basic Research Program of China(2015CB932302) ; National Basic Research Program of China(2015CB932302) ; National Basic Research Program of China(2015CB932302) ; National Basic Research Program of China(2015CB932302) ; National Basic Research Program of China(2015CB932302) ; National Basic Research Program of China(2015CB932302) ; National Natural Science Foundation of China(21401182 ; National Natural Science Foundation of China(21401182 ; National Natural Science Foundation of China(21401182 ; National Natural Science Foundation of China(21401182 ; National Natural Science Foundation of China(21401182 ; National Natural Science Foundation of China(21401182 ; National Natural Science Foundation of China(21401182 ; National Natural Science Foundation of China(21401182 ; Key Laboratory of Neutron Physics(CAEP 2014DB02) ; Key Laboratory of Neutron Physics(CAEP 2014DB02) ; Key Laboratory of Neutron Physics(CAEP 2014DB02) ; Key Laboratory of Neutron Physics(CAEP 2014DB02) ; Key Laboratory of Neutron Physics(CAEP 2014DB02) ; Key Laboratory of Neutron Physics(CAEP 2014DB02) ; Key Laboratory of Neutron Physics(CAEP 2014DB02) ; Key Laboratory of Neutron Physics(CAEP 2014DB02) ; Fundamental Research Funds for the Central University(WK2340000063 ; Fundamental Research Funds for the Central University(WK2340000063 ; Fundamental Research Funds for the Central University(WK2340000063 ; Fundamental Research Funds for the Central University(WK2340000063 ; Fundamental Research Funds for the Central University(WK2340000063 ; Fundamental Research Funds for the Central University(WK2340000063 ; Fundamental Research Funds for the Central University(WK2340000063 ; Fundamental Research Funds for the Central University(WK2340000063 ; 21331005 ; 21331005 ; 21331005 ; 21331005 ; 21331005 ; 21331005 ; 21331005 ; 21331005 ; WK 2060190027) ; WK 2060190027) ; WK 2060190027) ; WK 2060190027) ; WK 2060190027) ; WK 2060190027) ; WK 2060190027) ; WK 2060190027) ; 91422303) ; 91422303) ; 91422303) ; 91422303) ; 91422303) ; 91422303) ; 91422303) ; 91422303) ; National Basic Research Program of China(2015CB932302) ; National Basic Research Program of China(2015CB932302) ; National Basic Research Program of China(2015CB932302) ; National Basic Research Program of China(2015CB932302) ; National Basic Research Program of China(2015CB932302) ; National Basic Research Program of China(2015CB932302) ; National Basic Research Program of China(2015CB932302) ; National Basic Research Program of China(2015CB932302) ; National Natural Science Foundation of China(21401182 ; National Natural Science Foundation of China(21401182 ; National Natural Science Foundation of China(21401182 ; National Natural Science Foundation of China(21401182 ; National Natural Science Foundation of China(21401182 ; National Natural Science Foundation of China(21401182 ; National Natural Science Foundation of China(21401182 ; National Natural Science Foundation of China(21401182 ; Key Laboratory of Neutron Physics(CAEP 2014DB02) ; Key Laboratory of Neutron Physics(CAEP 2014DB02) ; Key Laboratory of Neutron Physics(CAEP 2014DB02) ; Key Laboratory of Neutron Physics(CAEP 2014DB02) ; Key Laboratory of Neutron Physics(CAEP 2014DB02) ; Key Laboratory of Neutron Physics(CAEP 2014DB02) ; Key Laboratory of Neutron Physics(CAEP 2014DB02) ; Key Laboratory of Neutron Physics(CAEP 2014DB02) ; Fundamental Research Funds for the Central University(WK2340000063 ; Fundamental Research Funds for the Central University(WK2340000063 ; Fundamental Research Funds for the Central University(WK2340000063 ; Fundamental Research Funds for the Central University(WK2340000063 ; Fundamental Research Funds for the Central University(WK2340000063 ; Fundamental Research Funds for the Central University(WK2340000063 ; Fundamental Research Funds for the Central University(WK2340000063 ; Fundamental Research Funds for the Central University(WK2340000063 ; 21331005 ; 21331005 ; 21331005 ; 21331005 ; 21331005 ; 21331005 ; 21331005 ; 21331005 ; WK 2060190027) ; WK 2060190027) ; WK 2060190027) ; WK 2060190027) ; WK 2060190027) ; WK 2060190027) ; WK 2060190027) ; WK 2060190027) ; 91422303) ; 91422303) ; 91422303) ; 91422303) ; 91422303) ; 91422303) ; 91422303) ; 91422303)
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/30230]  
专题合肥物质科学研究院_中科院强磁场科学中心
作者单位1.Univ Sci & Technol China, Collaborat Innovat Ctr Chem Energy Mat, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China
2.Univ Sci & Technol China, State Key Lab Particle Detect & Elect, Hefei 230026, Anhui, Peoples R China
3.Chinese Acad Sci, High Field Magnet Lab, Hefei 230031, Anhui, Peoples R China
推荐引用方式
GB/T 7714		 Lyu, Mengjie,Liu, Youwen,Zhi, Yuduo,et al. Electric-Field-Driven Dual Vacancies Evolution in Ultrathin Nanosheets Realizing Reversible Semiconductor to Half-Metal Transition[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,2015,137(47):15043-15048.
APA Lyu, Mengjie.,Liu, Youwen.,Zhi, Yuduo.,Xiao, Chong.,Gu, Bingchuan.,...&Xie, Yi.(2015).Electric-Field-Driven Dual Vacancies Evolution in Ultrathin Nanosheets Realizing Reversible Semiconductor to Half-Metal Transition.JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,137(47),15043-15048.
MLA Lyu, Mengjie,et al."Electric-Field-Driven Dual Vacancies Evolution in Ultrathin Nanosheets Realizing Reversible Semiconductor to Half-Metal Transition".JOURNAL OF THE AMERICAN CHEMICAL SOCIETY 137.47(2015):15043-15048.

入库方式： OAI收割

来源：合肥物质科学研究院

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