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Investigation on the Optimized Binary and Ternary Gallium Alloy as Thermal Interface Materials

文献类型：期刊论文

作者Gao, Yunxia1; Wang, Xianping1; Liu, Jing2,3; Fang, Qianfeng1
刊名JOURNAL OF ELECTRONIC PACKAGING
出版日期2017-03-01
卷号139期号:1页码:1-8
关键词Binary/ternary Alloy Gallium Alloy-based Thermal Interface Materials (Tims) Thermal Conductivity Wettability Thermal Interface Resistance
DOI10.1115/1.4035025
文献子类Article
英文摘要This work presents an experimental study to enhance the thermal contact conductance of high performance thermal interface materials (TIMs) using gallium alloy. In this experiment, the gallium alloy-based TIMs are synthesized by a micro-oxidation reaction method, which consists of gallium oxides (Ga2O3) dispersed uniformly in gallium alloys. An experimental apparatus is designed to measure the thermal resistance across the gallium alloy-based TIMs under steady-state conditions. The existence of Ga2O3 can effectively improve the wettability of gallium alloys with other materials. For example, they have a better wettability with copper and anodic coloring 6063 aluminum-alloy without any extrusion between the interface layers. Gallium binary alloy-based TIMs (GBTIM) or ternary alloy based-TIMs (GTTIM) are found to increase the operational temperature range comparing with that of the conventional thermal greases. The measured highest thermal conductivity is as high as 19.2Wm(-1)K(-1) for GBTIM at room temperature. The wide operational temperature, better wettability, and higher thermal conductivity make gallium alloy-based TIMs promising for a wider application as TIMs in electronic packaging areas. The measured resistance is found to be as low as 2.2 mm(2) KW-1 for GBTIM with a pressure of 0.05 MPa, which is much lower than that of the best commercialized thermal greases. In view of controlling pollution and raw materials wasting, the gallium alloy-based TIMs can be cleaned by 30% NaOH solution, and the pure gallium alloys are recycled, which can satisfy industrial production requirements effectively.
WOS关键词MELTING TEMPERATURE ALLOYS ; GAAS
WOS研究方向Engineering
语种英语
WOS记录号WOS:000395123200004
资助机构National Natural Science Foundation of China(51301186) ; National Natural Science Foundation of China(51301186) ; National Natural Science Foundation of China(51301186) ; National Natural Science Foundation of China(51301186) ; National Natural Science Foundation of China(51301186) ; National Natural Science Foundation of China(51301186) ; National Natural Science Foundation of China(51301186) ; National Natural Science Foundation of China(51301186)
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/32928]  
专题合肥物质科学研究院_中科院固体物理研究所
作者单位1.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
2.Chinese Acad Sci, Tech Inst Phys & Chem, Key Lab Cryogen, Beijing 100190, Peoples R China
3.Tsinghua Univ, Dept Biomed Engn, Beijing 100084, Peoples R China
推荐引用方式
GB/T 7714		 Gao, Yunxia,Wang, Xianping,Liu, Jing,et al. Investigation on the Optimized Binary and Ternary Gallium Alloy as Thermal Interface Materials[J]. JOURNAL OF ELECTRONIC PACKAGING,2017,139(1):1-8.
APA Gao, Yunxia,Wang, Xianping,Liu, Jing,&Fang, Qianfeng.(2017).Investigation on the Optimized Binary and Ternary Gallium Alloy as Thermal Interface Materials.JOURNAL OF ELECTRONIC PACKAGING,139(1),1-8.
MLA Gao, Yunxia,et al."Investigation on the Optimized Binary and Ternary Gallium Alloy as Thermal Interface Materials".JOURNAL OF ELECTRONIC PACKAGING 139.1(2017):1-8.

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来源：合肥物质科学研究院

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