Synthesis and morphology control of diluted Si nanowire arrays by metal-assisted chemical etching and thermal oxidation based on nanosphere lithography
文献类型：期刊论文
| 作者 | Zhou, Bukang1,2; Li, Xinhua1; Shi, Tongfei1 ; Liu, Guangqiang1; Cao, Huaxiang1,2; Wang, Yuqi1
|
| 刊名 | JOURNAL OF MATERIALS SCIENCE
 |
| 出版日期 | 2017-06-01 |
| 卷号 | 52期号:11页码:6449-6458 |
| DOI | 10.1007/s10853-017-0880-5 |
| 文献子类 | Article |
| 英文摘要 | Well-separated silicon nanowires with good periodicity and lower porosity density are fabricated using thermal oxidization and HF acid etching after forming silicon nanowire (Si NW) arrays with high diameter-to-pitch ratio by metal-assisted chemical etching based on nanosphere lithography. The factors responsible for the special morphology features of Si NW during the oxidation process are understood by thermal oxidation process simulation. A high-temperature oxidation process is proposed to facilitate the alleviation of necking and the acceleration of oxidation of NWs. Furthermore, to reduce the tapering trend, an oxygen diffuse barrier layer is proposed to be pre-deposited on the top of Si NWs before the high-temperature thermal oxidation treatment. By using these methods, a periodic array of Si NWs with a large pitch and small diameter is created. This approach can substantially reduce porosities and surface defects on the outer surface of Si NWs. |
| WOS关键词 | SILICON NANOWIRES ; FABRICATION ; DIAMETER ; GROWTH |
| WOS研究方向 | Materials Science |
| 语种 | 英语 |
| WOS记录号 | WOS:000397817100026 |
| 资助机构 | National Natural Science Foundation of China(51472247 ; National Natural Science Foundation of China(51472247 ; National Natural Science Foundation of China(51472247 ; National Natural Science Foundation of China(51472247 ; 51671182) ; 51671182) ; 51671182) ; 51671182) ; National Natural Science Foundation of China(51472247 ; National Natural Science Foundation of China(51472247 ; National Natural Science Foundation of China(51472247 ; National Natural Science Foundation of China(51472247 ; 51671182) ; 51671182) ; 51671182) ; 51671182) |
| 源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/32942]  |
| 专题 | 合肥物质科学研究院_中科院固体物理研究所 |
| 作者单位 | 1.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China 2.Univ Sci & Technol China, Hefei 230026, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhou, Bukang,Li, Xinhua,Shi, Tongfei,et al. Synthesis and morphology control of diluted Si nanowire arrays by metal-assisted chemical etching and thermal oxidation based on nanosphere lithography[J]. JOURNAL OF MATERIALS SCIENCE,2017,52(11):6449-6458. |
| APA | Zhou, Bukang,Li, Xinhua,Shi, Tongfei,Liu, Guangqiang,Cao, Huaxiang,&Wang, Yuqi.(2017).Synthesis and morphology control of diluted Si nanowire arrays by metal-assisted chemical etching and thermal oxidation based on nanosphere lithography.JOURNAL OF MATERIALS SCIENCE,52(11),6449-6458. |
| MLA | Zhou, Bukang,et al."Synthesis and morphology control of diluted Si nanowire arrays by metal-assisted chemical etching and thermal oxidation based on nanosphere lithography".JOURNAL OF MATERIALS SCIENCE 52.11(2017):6449-6458. |
入库方式： OAI收割
来源：合肥物质科学研究院
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