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Modulation of interfacial and electrical properties of HfGdO/GaAs gate stacks by ammonium sulfide passivation and rapid thermal annealing

文献类型：期刊论文

作者Jiang, S. S.1; He, G.1; Liang, S.1; Zhu, L.1; Li, W. D.1; Zheng, C. Y.1; Lv, J. G.2; Liu, M.3
刊名JOURNAL OF ALLOYS AND COMPOUNDS
出版日期2017-05-15
卷号704期号:无页码:322-328
关键词High-k Gate Dielectrics Interface Chemistry Xps Electrical Properties Cmos Devices
DOI10.1016/j.jallcom.2017.02.051
文献子类Article
英文摘要In this work, the interface chemistry and the reduction of GaAs surface species by using (NH4)(2)S solution prior to Gd-doped HfO2 (HGO) thin film deposition and the removal of Ga Oxides and elemental As by rapid thermal annealing (RTA) have been investigated by X-ray photoelectron spectroscopy (XPS). Additionally, the effect of the surface passivation and rapid thermal annealing on the electrical properties of MOS capacitors based on sputtering-derived HGO as gate dielectric on GaAs substrate has been detected by means of capacitance-voltage (C-V) and leakage current density-voltage (J-V) measurements. Based on electrical analysis, it can be noted that the constantly improvement of electrical properties, such as the decreases of flat band voltage (V-Fb), hysteresis (Delta Vib), oxide charge density (00,0, border trapped oxide charge density (N-bt) and leakage current density, have been observed. Especially, the dielectric constant of 16.72, flat band voltage yfb of 1.19 V, hysteresis Delta Vft, of 0.04 V, leakage current density of 1.54 x 10(-5) A/cm(2) at bias voltage of 1 V, total positive charge density and border trap charge density of 6.09 x 1012 CM-2 and 2.54 x 1011 cm(-2), respectively render 600 degrees C -annealed HGO thin films, potential high-k gate dielectrics in future CMOS devices. (C) 2017 Elsevier B.V. All rights reserved.
WOS关键词ATOMIC LAYER DEPOSITION ; BAND ALIGNMENT ; HFO2 ; GAAS ; DIELECTRICS ; FILMS ; GD
WOS研究方向Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
语种英语
WOS记录号WOS:000396950900041
资助机构National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Universities in Anhui Province(gxfxZD2016133) ; Universities in Anhui Province(gxfxZD2016133) ; Universities in Anhui Province(gxfxZD2016133) ; Universities in Anhui Province(gxfxZD2016133) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Universities in Anhui Province(gxfxZD2016133) ; Universities in Anhui Province(gxfxZD2016133) ; Universities in Anhui Province(gxfxZD2016133) ; Universities in Anhui Province(gxfxZD2016133) ; 11474284) ; 11474284) ; 11474284) ; 11474284)
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/32961]  
专题合肥物质科学研究院_中科院固体物理研究所
作者单位1.Anhui Univ, Sch Phys & Mat Sci, Radiat Detect Mat & Devices Lab, Hefei 230601, Peoples R China
2.Hefei Normal Univ, Dept Phys & Elect Engn, Hefei 230061, Peoples R China
3.Chinese Acad Sci, Key Lab Mat Phys, Anhui Key Lab Nanomat & Nanostruct, Inst Solid State Phys, Hefei 230031, Peoples R China
推荐引用方式
GB/T 7714		 Jiang, S. S.,He, G.,Liang, S.,et al. Modulation of interfacial and electrical properties of HfGdO/GaAs gate stacks by ammonium sulfide passivation and rapid thermal annealing[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2017,704(无):322-328.
APA Jiang, S. S..,He, G..,Liang, S..,Zhu, L..,Li, W. D..,...&Liu, M..(2017).Modulation of interfacial and electrical properties of HfGdO/GaAs gate stacks by ammonium sulfide passivation and rapid thermal annealing.JOURNAL OF ALLOYS AND COMPOUNDS,704(无),322-328.
MLA Jiang, S. S.,et al."Modulation of interfacial and electrical properties of HfGdO/GaAs gate stacks by ammonium sulfide passivation and rapid thermal annealing".JOURNAL OF ALLOYS AND COMPOUNDS 704.无(2017):322-328.

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来源：合肥物质科学研究院

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