中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页 机构 成果 学者
  
  1. CAS IR Grid
  2. 力学研究所
  3. 中国科学院力学研究所
  4. 非线性力学国家重点实验室
Fast Growth of Strain-Free AIN on Graphene-Buffered Sapphire

文献类型：期刊论文

作者Qi Y; Wang YY; Pang ZQ(庞振乾); Dou ZP; Wei TB; Gao P; Zhang SS; Xu XZ; Chang ZH; Deng B
刊名JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
出版日期2018-09-26
卷号140期号:38页码:11935-11941
ISSN号0002-7863
DOI10.1021/jacs.8b03871
英文摘要We study the roles of graphene acting as a buffer layer for growth of an A1N film on a sapphire substrate. Graphene can reduce the density of A1N nuclei but increase the growth rate for an individual nucleus at the initial growth stage. This can lead to the reduction of threading dislocations evolved at the coalescence boundaries. The graphene interlayer also weakens the interaction between AIN and sapphire and accommodates their large mismatch in the lattice and thermal expansion coefficients; thus, the compressive strain in A1N and the tensile strain in sapphire are largely relaxed. The effective relaxation of strain further leads to a low density of defects in the AIN films. These findings reveal the roles of graphene in III-nitride growth and offer valuable insights into the efficient applications of graphene in the light-emitting diode industry.
分类号一类
URL标识查看原文
WOS关键词VAPOR-PHASE EPITAXY ; LIGHT-EMITTING-DIODES ; SINGLE-CRYSTAL GRAPHENE ; GALLIUM-NITRIDE ; DISLOCATION DENSITY ; RAMAN-SPECTROSCOPY ; ALGAN/GAN HEMTS ; GAN EPILAYERS ; LASER-DIODES ; ALN
WOS研究方向Chemistry, Multidisciplinary
语种英语
WOS记录号WOS:000446142500013
资助机构National Key R&D Program of China [2018YFB0406703] ; National Natural Science Foundation of China [51432002, 61474109, 51290272, 51502007, 11474247, 51672007, Y761020000] ; National Equipment Program of China [ZDYZ2015-1] ; Beijing Municipal Science and Technology Planning Project [Z161100002116020, Z161100002116032] ; Beijing Natural Science Foundation [4182063] ; National Program for Thousand Young Talents of China ; "2011 Program" Peking-Tsinghua-IOP Collaborative Innovation Center of Quantum Matter
源URL[http://dspace.imech.ac.cn/handle/311007/77857]  
专题力学研究所_非线性力学国家重点实验室
作者单位1.Peking Univ, Ctr Nanochem CNC, Coll Chem & Mol Engn, Beijing 100871, Peoples R China
2.Peking Univ, Beijing Natl Lab Mol Sci, Beijing 100871, Peoples R China
3.Peking Univ, Acad Adv Interdisciplinary Studies, Beijing 100871, Peoples R China
4.Peking Univ, Electron Microscopy Lab, Sch Phys, Beijing 100871, Peoples R China
5.Peking Univ, Int Ctr Quantum Mat, Beijing 100871, Peoples R China
6.Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
7.Chinese Acad Sci, Res & Dev Ctr Solid State Lighting, Inst Semicond, Beijing 100083, Peoples R China
8.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
9.Chinese Acad Sci, Inst Mech, LNM, Beijing 100190, Peoples R China
10.Univ Chinese Acad Sci, Sch Engn Sci, Beijing 100049, Peoples R China
推荐引用方式
GB/T 7714		 Qi Y,Wang YY,Pang ZQ,et al. Fast Growth of Strain-Free AIN on Graphene-Buffered Sapphire[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,2018,140(38):11935-11941.
APA Qi Y.,Wang YY.,庞振乾.,Dou ZP.,Wei TB.,...&Liu ZF.(2018).Fast Growth of Strain-Free AIN on Graphene-Buffered Sapphire.JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,140(38),11935-11941.
MLA Qi Y,et al."Fast Growth of Strain-Free AIN on Graphene-Buffered Sapphire".JOURNAL OF THE AMERICAN CHEMICAL SOCIETY 140.38(2018):11935-11941.

入库方式： OAI收割

来源：力学研究所

浏览0
下载0
收藏0
其他版本

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。