Effect of argon flow on promoting boron doping for in-situ grown silicon nitride thin films containing silicon quantum dots
文献类型：期刊论文
| 作者 | Liu, Jia1; Liu, Bin1; Zhang, Xisheng1; Guo, Xiaojia1; Liu, Shengzhong (Frank)1,2 |
| 刊名 | NANOTECHNOLOGY
 |
| 出版日期 | 2017-07-14 |
| 卷号 | 28 |
| 关键词 | Si Quantum Dot Silicon Nitride Thin Film Pecvd Boron-doping Argon Dilution |
| DOI | 10.1088/1361-6528/aa718d |
| 英文摘要 | Boron-doped silicon nitride thin films (SiNx) containing silicon quantum dots (Si QD) were prepared in situ by plasma enhanced chemical vapor deposition. With the aim of optimizing the performance of thin films, the mixed gas including argon and hydrogen was applied as dilution. The effects of Ar flow on the structural, electrical and optical properties of B-doped SiNx thin films were systemically studied through various characterizations. By tuning the Ar flow, the properties, such as QD size, crystallinity and optical band gap, can be effectively controlled. The B-doping efficiency in thin films was proved to be promoted by introducing moderate Ar flow. The maximum values of dark conductivity (1.52 S cm(-1)) and carrier concentration (2.41 x 10(19) cm(-3)) were obtained for the B-doped SiNx thin films at the Ar flow of 200 sccm. Furthermore, the mechanism on the promotion in B-doping was illustrated in detail in this paper. |
| 语种 | 英语 |
| WOS记录号 | WOS:000404114800001 |
| 源URL | [http://cas-ir.dicp.ac.cn/handle/321008/152132]  |
| 专题 | 大连化学物理研究所_中国科学院大连化学物理研究所 |
| 作者单位 | 1.Shaanxi Normal Univ, Sch Mat Sci & Engn, Shaanxi Engn Lab Adv Energy Technol, Xian 710119, Peoples R China 2.Chinese Acad Sci, Dalian Inst Chem Phys, Dalian Natl Lab Clean Energy, State Key Lab Catalysis,IChEM, Dalian 116023, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, Jia,Liu, Bin,Zhang, Xisheng,et al. Effect of argon flow on promoting boron doping for in-situ grown silicon nitride thin films containing silicon quantum dots[J]. NANOTECHNOLOGY,2017,28. |
| APA | Liu, Jia,Liu, Bin,Zhang, Xisheng,Guo, Xiaojia,&Liu, Shengzhong .(2017).Effect of argon flow on promoting boron doping for in-situ grown silicon nitride thin films containing silicon quantum dots.NANOTECHNOLOGY,28. |
| MLA | Liu, Jia,et al."Effect of argon flow on promoting boron doping for in-situ grown silicon nitride thin films containing silicon quantum dots".NANOTECHNOLOGY 28(2017). |
入库方式： OAI收割
来源：大连化学物理研究所
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