Stable ultra-fast broad-bandwidth photodetectors based on alpha-CsPbI3 perovskite and NaYF4:Yb,Er quantum dots
文献类型：期刊论文
| 作者 | Zhang, Xisheng1,2; Wang, Qian1; Jin, Zhiwen1; Zhang, Jingru1; Liu, Shengzhong Frank1,3 |
| 刊名 | NANOSCALE
 |
| 出版日期 | 2017-05-21 |
| 卷号 | 9页码:6278-6285 |
| DOI | 10.1039/c7nr02010d |
| 英文摘要 | Photodetectors (PDs), especially those that respond in the infrared region, are highly desirable and have a wide range of applications ranging from cell phones, cameras, and home electronics to airplanes and satellites. Herein, we designed and fabricated PDs based on air-stable alpha-CsPbI3 QDs and an up-conversion material (NaYF4:Yb,Er QDs) using a facial low temperature spin-coating method. When the alpha-CsPbI3 QDs are surface-modified using NaYF4:Yb,Er QDs, their optical response is extended to the NIR region to allow broadband application from the UV to visible to NIR region (260 nm-1100 nm). The optoelectronic properties and compositional stability of the devices were also studied in detail. From the results, the PDs are capable of broad-bandwidth photo-detection from the deep UV to NIR region (260 nm-1100 nm) with good photoresponsivity (R, 1.5 A W-1), high on/off ratio (up to 10(4)) and very short rise/decay time (less than 5 ms/5 ms). It was found that the photoresponsivity performance of the PDs in this work is better than that of all the other previously reported perovskite QD-based PDs with a lateral device structure. Furthermore, the device performance shows very little degradation over the course of 60 days of storage under ambient conditions. The combination of remarkable stability, high performance broad-bandwidth photo-detection, and easy fabrication suggest that these QDs are a very promising semiconducting candidate for optoelectronic applications. |
| 语种 | 英语 |
| WOS记录号 | WOS:000401649700008 |
| 源URL | [http://cas-ir.dicp.ac.cn/handle/321008/152260]  |
| 专题 | 大连化学物理研究所_中国科学院大连化学物理研究所 |
| 作者单位 | 1.Shaanxi Normal Univ, Shaanxi Engn Lab Adv Energy Technol, Key Lab Appl Surface & Colloid Chem,Natl Minist E, Shaanxi Key Lab Adv Energy Technol,Sch Mat Sci &, Xian 710119, Peoples R China 2.Yuncheng Univ, Dept Phys & Elect Engn, Yuncheng 044000, Peoples R China 3.Chinese Acad Sci, Dalian Inst Chem Phys, IChEM, Dalian Natl Lab Clean Energy, Dalian 116023, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, Xisheng,Wang, Qian,Jin, Zhiwen,et al. Stable ultra-fast broad-bandwidth photodetectors based on alpha-CsPbI3 perovskite and NaYF4:Yb,Er quantum dots[J]. NANOSCALE,2017,9:6278-6285. |
| APA | Zhang, Xisheng,Wang, Qian,Jin, Zhiwen,Zhang, Jingru,&Liu, Shengzhong Frank.(2017).Stable ultra-fast broad-bandwidth photodetectors based on alpha-CsPbI3 perovskite and NaYF4:Yb,Er quantum dots.NANOSCALE,9,6278-6285. |
| MLA | Zhang, Xisheng,et al."Stable ultra-fast broad-bandwidth photodetectors based on alpha-CsPbI3 perovskite and NaYF4:Yb,Er quantum dots".NANOSCALE 9(2017):6278-6285. |
入库方式： OAI收割
来源：大连化学物理研究所
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