Improvement of crystallinity for poly-Si thin film by negative substrate bias at low temperature
文献类型：期刊论文
| 作者 | Liu, Jia1; Liu, Bin1; Zhang, Xisheng1; Guo, Xiaojia1; Liu, Shengzhong (Frank)1,2 |
| 刊名 | THIN SOLID FILMS
 |
| 出版日期 | 2017-05-01 |
| 卷号 | 629页码:90-96 |
| 关键词 | P-si Thin Film Bias Pecvd |
| DOI | 10.1016/j.tsf.2017.03.050 |
| 英文摘要 | Polycrystalline silicon (p-Si) thin films are fabricated by plasma enhanced chemical vapor deposition (PECVD) at low substrate temperature (180 degrees C) with high-hydrogen dilution. Negative DC substrate bias is applied during the deposition process for improving the crystallinity of thin films. It is found that there is a phase transition from nanocrystalline phase to polycrystalline phase at negative bias = 50 V, as identified by scanning electron microscopy (SEM). The optimized p-Si thin film with large grains (similar to 480 nm) are obtained at negative bias = 100 V. The deconvoluted Raman spectra reveal that the p-Si thin film is a mixture including amorphous silicon (a-Si), nanocrystalline silicon (nc-Si) and p-Si, and the crystalline volume fraction gradually increases with the substrate negative bias in the range of 0-100 V. The impacts of negative bias on the optical and electrical properties of p-Si thin films have been investigated. The growth mechanism of the p-Si grains has been discussed in detail. A grain-merging model is proposed for explaining the effect of negative bias on the formation of large p-Si grains at low temperature. (C) 2017 Elsevier B.V. All rights reserved. |
| 语种 | 英语 |
| WOS记录号 | WOS:000401079700013 |
| 源URL | [http://cas-ir.dicp.ac.cn/handle/321008/152316]  |
| 专题 | 大连化学物理研究所_中国科学院大连化学物理研究所 |
| 作者单位 | 1.Shaanxi Normal Univ, Sch Mat Sci & Engn, Shaanxi Engn Lab Adv Energy Technol, Xian 710119, Peoples R China 2.Chinese Acad Sci, Dalian Inst Chem Phys, Dalian Natl Lab Clean Energy, State key Lab Catalysis,iChEM, Dalian 116023, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, Jia,Liu, Bin,Zhang, Xisheng,et al. Improvement of crystallinity for poly-Si thin film by negative substrate bias at low temperature[J]. THIN SOLID FILMS,2017,629:90-96. |
| APA | Liu, Jia,Liu, Bin,Zhang, Xisheng,Guo, Xiaojia,&Liu, Shengzhong .(2017).Improvement of crystallinity for poly-Si thin film by negative substrate bias at low temperature.THIN SOLID FILMS,629,90-96. |
| MLA | Liu, Jia,et al."Improvement of crystallinity for poly-Si thin film by negative substrate bias at low temperature".THIN SOLID FILMS 629(2017):90-96. |
入库方式： OAI收割
来源：大连化学物理研究所
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