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Effect of gate voltage polarity on the ionic liquid gating behavior of NdNiO3/NdGaO3 heterostructures

文献类型：期刊论文

作者Dong, Yongqi1,2; Xu, Haoran3,4; Luo, Zhenlin1; Zhou, Hua5; Fong, Dillon D.2; Wu, Wenbin3,4; Gao, Chen1
刊名APL MATERIALS
出版日期2017-05-01
卷号5期号:5页码:1-7
DOI10.1063/1.4983617
文献子类Article
英文摘要The effect of gate voltage polarity on the behavior of NdNiO3 epitaxial thin films during ionic liquid gating is studied using in situ synchrotron X-ray techniques. We show that while negative biases have no discernible effect on the structure or composition of the films, large positive gate voltages result in the injection of a large concentration of oxygen vacancies (similar to 3%) and pronounced lattice expansion (0.17%) in addition to a 1000-fold increase in sheet resistance at room temperature. Despite the creation of large defect densities, the heterostructures exhibit a largely reversible switching behavior when sufficient time is provided for the vacancies to migrate in and out of the thin film surface. The results confirm that electrostatic gating takes place at negative gate voltages for p-type complex oxides while positive voltages favor the electrochemical reduction of Ni3+. Switching between positive and negative gate voltages therefore involves a combination of electronic and ionic doping processes that may be utilized in future electrochemical transistors. (C) 2017 Author(s).
WOS关键词NDNIO3 THIN-FILMS ; INSULATOR-TRANSITION ; ELECTRONIC-STRUCTURE ; CRYSTAL-STRUCTURE ; PEROVSKITES ; OXYGEN ; LANIO3 ; PHASE ; NONSTOICHIOMETRY ; MAGNETISM
WOS研究方向Science & Technology - Other Topics ; Materials Science ; Physics
语种英语
WOS记录号WOS:000402754200002
资助机构National Key Basic Research Program of China(2016YFA0300102 ; National Key Basic Research Program of China(2016YFA0300102 ; National Key Basic Research Program of China(2016YFA0300102 ; National Key Basic Research Program of China(2016YFA0300102 ; National Natural Science Foundation of China(11374010 ; National Natural Science Foundation of China(11374010 ; National Natural Science Foundation of China(11374010 ; National Natural Science Foundation of China(11374010 ; China Scholarship Council ; China Scholarship Council ; China Scholarship Council ; China Scholarship Council ; U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division ; U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division ; U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division ; U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division ; U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences(DE-AC02-06CH11357) ; U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences(DE-AC02-06CH11357) ; U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences(DE-AC02-06CH11357) ; U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences(DE-AC02-06CH11357) ; 2016YFA0401003) ; 2016YFA0401003) ; 2016YFA0401003) ; 2016YFA0401003) ; 11675179 ; 11675179 ; 11675179 ; 11675179 ; 11434009 ; 11434009 ; 11434009 ; 11434009 ; 11474263 ; 11474263 ; 11474263 ; 11474263 ; U1432251) ; U1432251) ; U1432251) ; U1432251) ; National Key Basic Research Program of China(2016YFA0300102 ; National Key Basic Research Program of China(2016YFA0300102 ; National Key Basic Research Program of China(2016YFA0300102 ; National Key Basic Research Program of China(2016YFA0300102 ; National Natural Science Foundation of China(11374010 ; National Natural Science Foundation of China(11374010 ; National Natural Science Foundation of China(11374010 ; National Natural Science Foundation of China(11374010 ; China Scholarship Council ; China Scholarship Council ; China Scholarship Council ; China Scholarship Council ; U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division ; U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division ; U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division ; U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division ; U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences(DE-AC02-06CH11357) ; U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences(DE-AC02-06CH11357) ; U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences(DE-AC02-06CH11357) ; U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences(DE-AC02-06CH11357) ; 2016YFA0401003) ; 2016YFA0401003) ; 2016YFA0401003) ; 2016YFA0401003) ; 11675179 ; 11675179 ; 11675179 ; 11675179 ; 11434009 ; 11434009 ; 11434009 ; 11434009 ; 11474263 ; 11474263 ; 11474263 ; 11474263 ; U1432251) ; U1432251) ; U1432251) ; U1432251)
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/31935]  
专题合肥物质科学研究院_中科院强磁场科学中心
作者单位1.Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R China
2.Argonne Natl Lab, Mat Sci Div, Argonne, IL 60439 USA
3.Univ Sci & Technol China, CAS, High Magnet Field Lab, Hefei 230026, Peoples R China
4.Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China
5.Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA
推荐引用方式
GB/T 7714		 Dong, Yongqi,Xu, Haoran,Luo, Zhenlin,et al. Effect of gate voltage polarity on the ionic liquid gating behavior of NdNiO3/NdGaO3 heterostructures[J]. APL MATERIALS,2017,5(5):1-7.
APA Dong, Yongqi.,Xu, Haoran.,Luo, Zhenlin.,Zhou, Hua.,Fong, Dillon D..,...&Gao, Chen.(2017).Effect of gate voltage polarity on the ionic liquid gating behavior of NdNiO3/NdGaO3 heterostructures.APL MATERIALS,5(5),1-7.
MLA Dong, Yongqi,et al."Effect of gate voltage polarity on the ionic liquid gating behavior of NdNiO3/NdGaO3 heterostructures".APL MATERIALS 5.5(2017):1-7.

入库方式： OAI收割

来源：合肥物质科学研究院

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