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Annealing temperature-dependent microstructure and optical and electrical properties of solution-derived Gd-doped ZrO2 high-k gate dielectrics

文献类型：期刊论文

作者Zhu, L.1; He, G.1; Sun, Z. Q.1; Liu, M.2; Jiang, S. S.1; Liang, S.1; Li, W. D.1
刊名JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY
出版日期2017-09-01
卷号83期号:3页码:675-682
关键词Gd-doped Zro2 Gate Dielectric Thin Films Annealing Temperature Sol-gel Optical Properties Electrical Properties
DOI10.1007/s10971-017-4468-y
文献子类Article
英文摘要In current work, the microstructure and optical and electrical properties of sol-gel-derived Gd-doped ZrO2 gate dielectric thin films as functions of annealing temperatures were systemically investigated. Analyzes by x-ray diffraction have indicated that the 240 A degrees C-baked sample as well as those samples annealed at lower temperatures keep amorphous state. In the sample annealed at 500 A degrees C, however, the amorphous phase disappears and tetragonal ZrO2 is formed. Measurements from ultraviolet-visible spectroscopy (UV/Vis) have demonstrated that transmittance of all samples in the visible region is approximately 80% and the increase in band gap energy has been found with increasing the annealing temperature. Electrical properties of all samples based on Al/Si/ZrGdOx/Al MOS capacitor have been investigated by using semiconductor device analyzer. Through the analysis and calculation of the electrical characteristic curves, solution-processed Al/ZrGdOx/Si/Al capacitor shows improved performances at a annealing temperature of 400 A degrees C, such as high dielectric constant (k) of 16.56, lowest oxidation charge density (Q (ox)) of -0.74 x 10(12) cm(-2), and boundary trap oxidation charge density (N (bt)) of 3.17 x 10(12) cm(-2). In addition, the leakage current mechanism for 400 A degrees C-annealed sample has been discussed in detail.
WOS关键词ATOMIC LAYER DEPOSITION ; OXIDE THIN-FILMS ; INTERFACIAL PROPERTIES ; PLASMA-OXIDATION ; HFO2 ; TRANSISTORS ; MODULATION ; SILICON ; TIO2 ; ALD
WOS研究方向Materials Science
语种英语
WOS记录号WOS:000407375500021
资助机构National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284)
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/33555]  
专题合肥物质科学研究院_中科院固体物理研究所
作者单位1.Anhui Univ, Sch Phys & Mat Sci, Radiat Detect Mat & Devices Lab, Hefei 230601, Anhui, Peoples R China
2.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Anhui Key Lab Nanomat & Nanostruct, Hefei 230031, Peoples R China
推荐引用方式
GB/T 7714		 Zhu, L.,He, G.,Sun, Z. Q.,et al. Annealing temperature-dependent microstructure and optical and electrical properties of solution-derived Gd-doped ZrO2 high-k gate dielectrics[J]. JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY,2017,83(3):675-682.
APA Zhu, L..,He, G..,Sun, Z. Q..,Liu, M..,Jiang, S. S..,...&Li, W. D..(2017).Annealing temperature-dependent microstructure and optical and electrical properties of solution-derived Gd-doped ZrO2 high-k gate dielectrics.JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY,83(3),675-682.
MLA Zhu, L.,et al."Annealing temperature-dependent microstructure and optical and electrical properties of solution-derived Gd-doped ZrO2 high-k gate dielectrics".JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY 83.3(2017):675-682.

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来源：合肥物质科学研究院

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