中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页 机构 成果 学者
  
  1. CAS IR Grid
  2. 合肥物质科学研究院
  3. 中国科学院合肥物质科学研究院
  4. 中科院安徽光学精密机械研究所
Optical and defect properties of S-doped and Al-doped GaSe crystals

文献类型：期刊论文

作者Huang, Chang-Bao; Wu, Hai-Xin; Ni, You-Bao; Wang, Zhen-You; Chen, Shi-Jing
刊名CHINESE PHYSICS B
出版日期2017-08-01
卷号26期号:9
关键词Doped Gase Crystals Defect Optical Properties Mechanical Properties
DOI10.1088/1674-1056/26/9/094211
文献子类Article
英文摘要S-doped and Al-doped GaSe crystals are promising materials for their applications in nonlinear frequency conversion devices. The optical and defect properties of pure, S-doped, and Al-doped GaSe crystals were studied by using photoluminescence (PL) and Fourier transform infrared spectroscopy (FT-IR). The micro-topography of (0001) face of these samples was observed by using scanning electron microscope (SEM) to investigate the influence of the doped defects on the intralayer and interlayer chemical bondings. The doped S or Al atoms form the S-Se(0) or Al-Ga(+1) substitutional defects in thelayer GaSe structure, and the positive center of Al-Ga(+1) could induce defect complexes. The incorporations of S and Al atoms can change the optical and mechanical properties of the GaSe crystal by influencing the chemical bonding of the layer structure. The study results may provide guidance for the crystal growth and further applications of S-doped and Al-doped GaSe crystals.
WOS关键词GROWTH ; SHG
WOS研究方向Physics
语种英语
WOS记录号WOS:000409465700011
资助机构Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128)
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/33609]  
专题合肥物质科学研究院_中科院安徽光学精密机械研究所
作者单位Chinese Acad Sci, Anhui Inst Opt & Fine Mech, Anhui Prov Key Lab Photon Devices & Mat, Hefei 230031, Anhui, Peoples R China
推荐引用方式
GB/T 7714		 Huang, Chang-Bao,Wu, Hai-Xin,Ni, You-Bao,et al. Optical and defect properties of S-doped and Al-doped GaSe crystals[J]. CHINESE PHYSICS B,2017,26(9).
APA Huang, Chang-Bao,Wu, Hai-Xin,Ni, You-Bao,Wang, Zhen-You,&Chen, Shi-Jing.(2017).Optical and defect properties of S-doped and Al-doped GaSe crystals.CHINESE PHYSICS B,26(9).
MLA Huang, Chang-Bao,et al."Optical and defect properties of S-doped and Al-doped GaSe crystals".CHINESE PHYSICS B 26.9(2017).

入库方式： OAI收割

来源：合肥物质科学研究院

浏览0
下载0
收藏0
其他版本

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。