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  4. 中科院强磁场科学中心
Tunable inverted gap in monolayer quasi-metallic MoS2 induced by strong charge-lattice coupling

文献类型：期刊论文

作者Yin, Xinmao1,2,3; Wang, Qixing2; Cao, Liang2,4; Tang, Chi Sin2,5; Luo, Xin2,6,7,8; Zheng, Yujie2; Wong, Lai Mun9; Wang, Shi Jie9; Quek, Su Ying2,6,7; Zhang, Wenjing1
刊名NATURE COMMUNICATIONS
出版日期2017-09-07
卷号8
DOI10.1038/s41467-017-00640-2
文献子类Article
英文摘要Polymorphism of two-dimensional transition metal dichalcogenides such as molybdenum disulfide (MoS2) exhibit fascinating optical and transport properties. Here, we observe a tunable inverted gap (similar to 0.50 eV) and a fundamental gap (similar to 0.10 eV) in quasimetallic monolayer MoS2. Using spectral-weight transfer analysis, we find that the inverted gap is attributed to the strong charge-lattice coupling in two-dimensional transition metal dichalcogenides ( 2D-TMDs). A comprehensive experimental study, supported by theoretical calculations, is conducted to understand the transition of monolayer MoS2 on gold film from trigonal semiconducting 1H phase to the distorted octahedral quasimetallic 1T' phase. We clarify that electron doping from gold, facilitated by interfacial tensile strain, is the key mechanism leading to its 1H-1T' phase transition, thus resulting in the formation of the inverted gap. Our result shows the importance of charge-lattice coupling to the intrinsic properties of the inverted gap and polymorphism of MoS2, thereby unlocking new possibilities for 2D-TMD-based device fabrication.
WOS关键词LAYER MOLYBDENUM-DISULFIDE ; CHEMICAL-VAPOR-DEPOSITION ; PHASE-TRANSITION ; ELECTRONIC-STRUCTURE ; ATOMIC LAYERS ; THIN-FILMS ; MOTE2 ; SUPERCONDUCTIVITY ; HETEROSTRUCTURES ; DICHALCOGENIDES
WOS研究方向Science & Technology - Other Topics
语种英语
WOS记录号WOS:000409997500020
资助机构National Natural Science Foundation of China(51472164) ; National Natural Science Foundation of China(51472164) ; National Natural Science Foundation of China(51472164) ; National Natural Science Foundation of China(51472164) ; National Natural Science Foundation of China(51472164) ; National Natural Science Foundation of China(51472164) ; National Natural Science Foundation of China(51472164) ; National Natural Science Foundation of China(51472164) ; National Natural Science Foundation of China(51472164) ; National Natural Science Foundation of China(51472164) ; National Natural Science Foundation of China(51472164) ; National Natural Science Foundation of China(51472164) ; National Natural Science Foundation of China(51472164) ; National Natural Science Foundation of China(51472164) ; National Natural Science Foundation of China(51472164) ; National Natural Science Foundation of China(51472164) ; Natural Science Foundation of SZU(000050) ; Natural Science Foundation of SZU(000050) ; Natural Science Foundation of SZU(000050) ; Natural Science Foundation of SZU(000050) ; Natural Science Foundation of SZU(000050) ; Natural Science Foundation of SZU(000050) ; Natural Science Foundation of SZU(000050) ; Natural Science Foundation of SZU(000050) ; Natural Science Foundation of SZU(000050) ; Natural Science Foundation of SZU(000050) ; Natural Science Foundation of SZU(000050) ; Natural Science Foundation of SZU(000050) ; Natural Science Foundation of SZU(000050) ; Natural Science Foundation of SZU(000050) ; Natural Science Foundation of SZU(000050) ; Natural Science Foundation of SZU(000050) ; 1000 Talents Program for Young Scientists of China ; 1000 Talents Program for Young Scientists of China ; 1000 Talents Program for Young Scientists of China ; 1000 Talents Program for Young Scientists of China ; 1000 Talents Program for Young Scientists of China ; 1000 Talents Program for Young Scientists of China ; 1000 Talents Program for Young Scientists of China ; 1000 Talents Program for Young Scientists of China ; 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源URL[http://ir.hfcas.ac.cn:8080/handle/334002/33695]  
专题合肥物质科学研究院_中科院强磁场科学中心
作者单位1.Shenzhen Univ, SZU NUS Collaborat Innovat Ctr Optoelect Sci & Te, Key Lab Optoelect Devices & Syst, Minist Educ & Guangdong Prov,Coll Optoelect Engn, Shenzhen 518060, Peoples R China
2.Natl Univ Singapore, Dept Phys, Fac Sci, Singapore 117542, Singapore
3.Natl Univ Singapore, SSLS, Singapore 117603, Singapore
4.Chinese Acad Sci, Anhui Prov Key Lab Condensed Matter Phys Extreme, High Field Magnet Lab, Hefei 230031, Anhui, Peoples R China
5.Natl Univ Singapore, NUS Grad Sch Integrat Sci & Engn, Singapore 117456, Singapore
6.Natl Univ Singapore, Ctr Adv Mat 2D, Singapore 117551, Singapore
7.Natl Univ Singapore, Graphene Res Ctr, Singapore 117551, Singapore
8.Hong Kong Polytech Univ, Dept Appl Phys, Kowloon 999077, Hong Kong, Peoples R China
9.ASTAR, IMRE, 2 Fusionopolis Way, Innovis 138634, Singapore
10.Natl Univ Singapore, NUSNNI NanoCore, Singapore 117576, Singapore
推荐引用方式
GB/T 7714		 Yin, Xinmao,Wang, Qixing,Cao, Liang,et al. Tunable inverted gap in monolayer quasi-metallic MoS2 induced by strong charge-lattice coupling[J]. NATURE COMMUNICATIONS,2017,8.
APA Yin, Xinmao.,Wang, Qixing.,Cao, Liang.,Tang, Chi Sin.,Luo, Xin.,...&Wee, Andrew T. S..(2017).Tunable inverted gap in monolayer quasi-metallic MoS2 induced by strong charge-lattice coupling.NATURE COMMUNICATIONS,8.
MLA Yin, Xinmao,et al."Tunable inverted gap in monolayer quasi-metallic MoS2 induced by strong charge-lattice coupling".NATURE COMMUNICATIONS 8(2017).

入库方式： OAI收割

来源：合肥物质科学研究院

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