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  4. 中科院固体物理研究所
Robust and Pristine Topological Dirac Semimetal Phase in Pressured Two-Dimensional Black Phosphorus

文献类型：期刊论文

作者Gong, Peng-Lai1,2,3; Deng, Bei1; Huang, Liang-Feng4; Hu, Liang1; Wang, Wei-Chao2,3; Liu, Da-Yong5; Shi, Xing-Qang1; Zeng, Zhi5,6; Zou, Liang-Jian5,6
刊名JOURNAL OF PHYSICAL CHEMISTRY C
出版日期2017-09-28
卷号121期号:38页码:20931-20936
DOI10.1021/acs.jpcc.7b08926
文献子类Article
英文摘要Very recently, in spite of various efforts in searching for twodimensional topological Dirac semimetals (2D TDSMs) in phosphorene, there remains a lack of experimentally efficient way to activate such phase transition and the underlying mechanism for the topological phase acquisition is still controversial. Here, from first-principles calculations in combination with a band-sorting technique based on kp theory, a layer-pressure topological phase diagram is obtained and some of the controversies are clarified. We demonstrate that, compared with tuning by external electric fields, strain or doping by adsorption, hydrostatic pressure can be an experimentally more feasible way to activate the topological phase transition for 2D TDSM acquisition in phosphorene. More importantly, the resultant TDSM state is a pristine phase possessing a single pair of symmetry-protected Dirac cones right at the Fermi level, in startling contrast to the pressured bulk black phosphorus where only a carrier-mixed Dirac state can be obtained. We corroborate that the Dirac points are robust under external perturbation as long, as the glide-plane symmetry preserves. Our findings provide a means to realize 2D pristine TDSM in a more achievable manner, which could be crucial in the realization of controllable TDSM states in phosphorene and related 2D materials.
WOS关键词MOLYBDENUM-DISULFIDE ; HYDROSTATIC-PRESSURE ; LAYER ; MOS2 ; CONFINEMENT ; MONOLAYER ; DENSITY
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science
语种英语
WOS记录号WOS:000412150500044
资助机构National key research and development program(2016YFB0901600) ; National key research and development program(2016YFB0901600) ; National key research and development program(2016YFB0901600) ; National key research and development program(2016YFB0901600) ; National key research and development program(2016YFB0901600) ; National key research and development program(2016YFB0901600) ; National key research and development program(2016YFB0901600) ; National key research and development program(2016YFB0901600) ; NSF of China(11474145 ; NSF of China(11474145 ; NSF of China(11474145 ; NSF of China(11474145 ; NSF of China(11474145 ; NSF of China(11474145 ; NSF of China(11474145 ; NSF of China(11474145 ; Nanshan Key Lab on Nonvolatile Memory Grant(KC2015ZDYF0003A) ; Nanshan Key Lab on Nonvolatile Memory Grant(KC2015ZDYF0003A) ; Nanshan Key Lab on Nonvolatile Memory Grant(KC2015ZDYF0003A) ; Nanshan Key Lab on Nonvolatile Memory Grant(KC2015ZDYF0003A) ; Nanshan Key Lab on Nonvolatile Memory Grant(KC2015ZDYF0003A) ; Nanshan Key Lab on Nonvolatile Memory Grant(KC2015ZDYF0003A) ; Nanshan Key Lab on Nonvolatile Memory Grant(KC2015ZDYF0003A) ; Nanshan Key Lab on Nonvolatile Memory Grant(KC2015ZDYF0003A) ; Special Program for Applied Research on Super Computation of the NSFC-Guangdong Joint Fund (the second phase)(U1501501) ; Special Program for Applied Research on Super Computation of the NSFC-Guangdong Joint Fund (the second phase)(U1501501) ; Special Program for Applied Research on Super Computation of the NSFC-Guangdong Joint Fund (the second phase)(U1501501) ; Special Program for Applied Research on Super Computation of the NSFC-Guangdong Joint Fund (the second phase)(U1501501) ; Special Program for Applied Research on Super Computation of the NSFC-Guangdong Joint Fund (the second phase)(U1501501) ; Special Program for Applied Research on Super Computation of the NSFC-Guangdong Joint Fund (the second phase)(U1501501) ; Special Program for Applied Research on Super Computation of the NSFC-Guangdong Joint Fund (the second phase)(U1501501) ; Special Program for Applied Research on Super Computation of the NSFC-Guangdong Joint Fund (the second phase)(U1501501) ; 11334003 ; 11334003 ; 11334003 ; 11334003 ; 11334003 ; 11334003 ; 11334003 ; 11334003 ; 11534010) ; 11534010) ; 11534010) ; 11534010) ; 11534010) ; 11534010) ; 11534010) ; 11534010) ; National key research and development program(2016YFB0901600) ; National key research and development program(2016YFB0901600) ; National key research and development program(2016YFB0901600) ; National key research and development program(2016YFB0901600) ; National key research and development program(2016YFB0901600) ; National key research and development program(2016YFB0901600) ; National key research and development program(2016YFB0901600) ; National key research and development program(2016YFB0901600) ; NSF of China(11474145 ; NSF of China(11474145 ; NSF of China(11474145 ; NSF of China(11474145 ; NSF of China(11474145 ; NSF of China(11474145 ; NSF of China(11474145 ; NSF of China(11474145 ; Nanshan Key Lab on Nonvolatile Memory Grant(KC2015ZDYF0003A) ; Nanshan Key Lab on Nonvolatile Memory Grant(KC2015ZDYF0003A) ; Nanshan Key Lab on Nonvolatile Memory Grant(KC2015ZDYF0003A) ; Nanshan Key Lab on Nonvolatile Memory Grant(KC2015ZDYF0003A) ; Nanshan Key Lab on Nonvolatile Memory Grant(KC2015ZDYF0003A) ; Nanshan Key Lab on Nonvolatile Memory Grant(KC2015ZDYF0003A) ; Nanshan Key Lab on Nonvolatile Memory Grant(KC2015ZDYF0003A) ; Nanshan Key Lab on Nonvolatile Memory Grant(KC2015ZDYF0003A) ; Special Program for Applied Research on Super Computation of the NSFC-Guangdong Joint Fund (the second phase)(U1501501) ; Special Program for Applied Research on Super Computation of the NSFC-Guangdong Joint Fund (the second phase)(U1501501) ; Special Program for Applied Research on Super Computation of the NSFC-Guangdong Joint Fund (the second phase)(U1501501) ; Special Program for Applied Research on Super Computation of the NSFC-Guangdong Joint Fund (the second phase)(U1501501) ; Special Program for Applied Research on Super Computation of the NSFC-Guangdong Joint Fund (the second phase)(U1501501) ; Special Program for Applied Research on Super Computation of the NSFC-Guangdong Joint Fund (the second phase)(U1501501) ; Special Program for Applied Research on Super Computation of the NSFC-Guangdong Joint Fund (the second phase)(U1501501) ; Special Program for Applied Research on Super Computation of the NSFC-Guangdong Joint Fund (the second phase)(U1501501) ; 11334003 ; 11334003 ; 11334003 ; 11334003 ; 11334003 ; 11334003 ; 11334003 ; 11334003 ; 11534010) ; 11534010) ; 11534010) ; 11534010) ; 11534010) ; 11534010) ; 11534010) ; 11534010)
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/33699]  
专题合肥物质科学研究院_中科院固体物理研究所
作者单位1.South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China
2.Nankai Univ, Dept Elect, Tianjin 300071, Peoples R China
3.Nankai Univ, Tianjin Key Lab Photoelect Thin Film Device & Tec, Tianjin 300071, Peoples R China
4.Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
5.Chinese Acad Sci, Key Lab Mat Phys, Inst Solid State Phys, POB 1129, Hefei 230031, Anhui, Peoples R China
6.Univ Sci & Technol China, Hefei 230026, Anhui, Peoples R China
推荐引用方式
GB/T 7714		 Gong, Peng-Lai,Deng, Bei,Huang, Liang-Feng,et al. Robust and Pristine Topological Dirac Semimetal Phase in Pressured Two-Dimensional Black Phosphorus[J]. JOURNAL OF PHYSICAL CHEMISTRY C,2017,121(38):20931-20936.
APA Gong, Peng-Lai.,Deng, Bei.,Huang, Liang-Feng.,Hu, Liang.,Wang, Wei-Chao.,...&Zou, Liang-Jian.(2017).Robust and Pristine Topological Dirac Semimetal Phase in Pressured Two-Dimensional Black Phosphorus.JOURNAL OF PHYSICAL CHEMISTRY C,121(38),20931-20936.
MLA Gong, Peng-Lai,et al."Robust and Pristine Topological Dirac Semimetal Phase in Pressured Two-Dimensional Black Phosphorus".JOURNAL OF PHYSICAL CHEMISTRY C 121.38(2017):20931-20936.

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来源：合肥物质科学研究院

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