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Effect of Sn doping on improvement of minority carrier lifetime of Fe contaminated p-type multi-crystalline Si ingot

文献类型：期刊论文

作者Sun, Jifei1,2; He, Qiuxiang1; Ban, Boyuan1; Bai, Xiaolong1; Li, Jingwei1; Chen, Jian1
刊名JOURNAL OF CRYSTAL GROWTH
出版日期2017-01-15
卷号458期号:无页码:66-71
关键词Minority Carrier Lifetime Doping Impurities Directional Solidification Multi-crystalline Si
DOI10.1016/j.jcrysgro.2016.11.025
文献子类Article
英文摘要The influence of Sn doping on improvement of minority carrier lifetime (MCL) of Fe contaminated directionally solidified p-type multi-crystalline Si ingots is studied. The macrostructure and resistivity distribution of the Si ingots indicate that no significant difference exists with and without Sn doping. The average MCL increase by 26.2%, 31.8%, 8.1% with 20 ppmw, 40 ppmw, 60 ppmw Sn doping, respectively. The MCL was improved evidently due to the reduction of formation of interstitial Fe, FeB. The doping of Sn promotes formation of vacancies, which also contributes to passivation of interstitial Fe and FeB. A calculation of constitutional supercooling is carried out, which shows that Fe have great influence on the solidification interface stability, and Sn have little influence on the interface stability.
WOS关键词DOPED CZOCHRALSKI SILICON ; SOLAR-CELLS ; MULTICRYSTALLINE SILICON ; SOLID-SOLUTION ; GERMANIUM ; IRON ; PERFORMANCE ; DIFFUSION ; DEFECTS ; DISSOCIATION
WOS研究方向Crystallography ; Materials Science ; Physics
语种英语
WOS记录号WOS:000389590900010
资助机构National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; CPSF-CAS Joint Foundation for Excellent Postdoctoral Fellows(2016LH0017) ; CPSF-CAS Joint Foundation for Excellent Postdoctoral Fellows(2016LH0017) ; CPSF-CAS Joint Foundation for Excellent Postdoctoral Fellows(2016LH0017) ; CPSF-CAS Joint Foundation for Excellent Postdoctoral Fellows(2016LH0017) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 51474201) ; 51474201) ; 51474201) ; 51474201) ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; CPSF-CAS Joint Foundation for Excellent Postdoctoral Fellows(2016LH0017) ; CPSF-CAS Joint Foundation for Excellent Postdoctoral Fellows(2016LH0017) ; CPSF-CAS Joint Foundation for Excellent Postdoctoral Fellows(2016LH0017) ; CPSF-CAS Joint Foundation for Excellent Postdoctoral Fellows(2016LH0017) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 51474201) ; 51474201) ; 51474201) ; 51474201)
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/30253]  
专题合肥物质科学研究院_应用技术研究所
作者单位1.Chinese Acad Sci, Hefei Inst Phys Sci, Inst Appl Technol, Key Lab Novel Thin Film Solar Cells, Hefei 230031, Peoples R China
2.Univ Sci & Technol China, Hefei 230026, Peoples R China
推荐引用方式
GB/T 7714		 Sun, Jifei,He, Qiuxiang,Ban, Boyuan,et al. Effect of Sn doping on improvement of minority carrier lifetime of Fe contaminated p-type multi-crystalline Si ingot[J]. JOURNAL OF CRYSTAL GROWTH,2017,458(无):66-71.
APA Sun, Jifei,He, Qiuxiang,Ban, Boyuan,Bai, Xiaolong,Li, Jingwei,&Chen, Jian.(2017).Effect of Sn doping on improvement of minority carrier lifetime of Fe contaminated p-type multi-crystalline Si ingot.JOURNAL OF CRYSTAL GROWTH,458(无),66-71.
MLA Sun, Jifei,et al."Effect of Sn doping on improvement of minority carrier lifetime of Fe contaminated p-type multi-crystalline Si ingot".JOURNAL OF CRYSTAL GROWTH 458.无(2017):66-71.

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来源：合肥物质科学研究院

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