A power Silicon Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) featuring a monolithically integrated Schottky Barrier Diode (SBD) is proposed in this paper. The proposed structure is optimized to suppress the electric field in the gate oxide under reverse blocking state, which is beneficial to enhancing the gate oxide long term reliability. Both the static and switching characteristics are studied by TCAD simulation using Sentaurus. Compared to the conventional MOSFET-SBD pair, the proposed device shows not only lower switching loss but also smaller current overshoot during the turn on process. © VDE VERLAG GMBH · Berlin · Offenbach.