Influence of interface structure on electrical properties of NiGe/Ge contacts
文献类型：期刊论文
| 作者 | Deng, Yunsheng1,2; Nakatsuka, Osamu1; Sakashita, Mitsuo1; Zaima, Shigeaki1 |
| 刊名 | JAPANESE JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2015-05-01 |
| 卷号 | 54期号:5页码:6 |
| ISSN号 | 0021-4922 |
| DOI | 10.7567/JJAP.54.05EA01 |
| 通讯作者 | Deng, YS (reprint author), Nagoya Univ, Grad Sch Engn, Dept Crystalline Mat Sci, Nagoya, Aichi 4648603, Japan. |
| 英文摘要 | We have investigated the electrical properties of NiGe/n-type Ge contacts with various crystalline structures. We found that the Schottky barrier height (SBH) of the NiGe/Ge contact could be modulated by controlling the crystalline structures of the NiGe layer. An epitaxial NiGe(100)/n-type Ge(110) contact shows an SBH 0.15 eV lower than that of the polycrystalline NiGe/n-type Ge(110) contact, whereas the SBH of the epitaxial NiGe(111)/n-type Ge(001) contact is not so low compared with that of the polycrystalline NiGe/n-type Ge(001) contact with Fermi level pinning, even though an epitaxial NiGe layer with good crystalline quality is formed. This distinctive modulation of SBH could not be explained by considering only the metal-induced gap states model. We consider that this modulation of SBHs is a consequence of the variation in the density of the interface states induced by the extrinsic factors, such as the dangling bonds and/or defects. Our results give us a hint that the modulation of the SBH by controlling the crystalline structures is possible. (C) 2015 The Japan Society of Applied Physics |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000357818200002 |
| 出版者 | IOP PUBLISHING LTD |
| 源URL | [http://119.78.100.138/handle/2HOD01W0/1780]  |
| 专题 | 中国科学院重庆绿色智能技术研究院 |
| 通讯作者 | Deng, Yunsheng |
| 作者单位 | 1.Nagoya Univ, Grad Sch Engn, Dept Crystalline Mat Sci, Nagoya, Aichi 4648603, Japan 2.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China |
| 推荐引用方式 GB/T 7714 | Deng, Yunsheng,Nakatsuka, Osamu,Sakashita, Mitsuo,et al. Influence of interface structure on electrical properties of NiGe/Ge contacts[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2015,54(5):6. |
| APA | Deng, Yunsheng,Nakatsuka, Osamu,Sakashita, Mitsuo,&Zaima, Shigeaki.(2015).Influence of interface structure on electrical properties of NiGe/Ge contacts.JAPANESE JOURNAL OF APPLIED PHYSICS,54(5),6. |
| MLA | Deng, Yunsheng,et al."Influence of interface structure on electrical properties of NiGe/Ge contacts".JAPANESE JOURNAL OF APPLIED PHYSICS 54.5(2015):6. |
入库方式： OAI收割
来源：重庆绿色智能技术研究院
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