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Floating-gate controlled programmable non-volatile black phosphorus PNP junction memory

文献类型：期刊论文

作者Zhang, Pengfei1; Li, Dong2; Chen, Mingyuan2; Zong, Qijun2; Shen, Jun3; Wan, Dongyun1; Zhu, Jingtao2; Zhang, Zengxing2
刊名NANOSCALE
出版日期2018-02-21
卷号10期号:7页码:3148-3152
ISSN号2040-3364
DOI10.1039/c7nr08515j
英文摘要To meet the increasing requirements of minimizing circuits, the development of novel device architectures that use ultra-thin two-dimensional materials is encouraged. Here, we demonstrate a nonvolatile black phosphorus (BP) PNP junction in a BP/h-BN/graphene heterostructure in which BP acts as a transport channel layer, hexagonal boron nitride (h-BN) serves as a tunnel barrier layer and graphene is the charge-trapping layer. The device architecture is designed such that only the middle part of the BP is aligned over the graphene flake, enabling the flexible tuning of the charge carriers in the BP over the graphene charge-trapping layer. Thus, the device exhibits the ability to work in two different operating modes (PNP and PP+P). Each operating mode can be retained well and demonstrates non-volatile behavior, and each can be programmed by using the control-gate.
资助项目Natural Science Foundation of Shanghai[16ZR1439400] ; Natural Science Foundation of Shanghai[17ZR1447700] ; National Natural Science Foundation of China[U1432244] ; National Natural Science Foundation of China[U1632108] ; Chinese Academy of Sciences[U1632108] ; Science and Technology Commission of Shanghai Municipality[16JC1401700]
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种英语
WOS记录号WOS:000425348100005
出版者ROYAL SOC CHEMISTRY
源URL[http://119.78.100.138/handle/2HOD01W0/6254]  
专题科技处
通讯作者Shen, Jun; Wan, Dongyun; Zhang, Zengxing
作者单位1.Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China
2.Tongji Univ, Sch Phys Sci & Engn, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R China
3.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
推荐引用方式
GB/T 7714		 Zhang, Pengfei,Li, Dong,Chen, Mingyuan,et al. Floating-gate controlled programmable non-volatile black phosphorus PNP junction memory[J]. NANOSCALE,2018,10(7):3148-3152.
APA Zhang, Pengfei.,Li, Dong.,Chen, Mingyuan.,Zong, Qijun.,Shen, Jun.,...&Zhang, Zengxing.(2018).Floating-gate controlled programmable non-volatile black phosphorus PNP junction memory.NANOSCALE,10(7),3148-3152.
MLA Zhang, Pengfei,et al."Floating-gate controlled programmable non-volatile black phosphorus PNP junction memory".NANOSCALE 10.7(2018):3148-3152.

入库方式： OAI收割

来源：重庆绿色智能技术研究院

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