Bandgap modulation of MoS2 monolayer by thermal annealing and quick cooling
文献类型：期刊论文
| 作者 | Zhao, Hong-Quan1 ; Mao, Xin2; Zhou, Dahua1; Feng, Shuanglong1; Shi, Xuan1; Ma, Yong1; Wei, Xingzhan1; Mao, Yuliang2
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| 刊名 | NANOSCALE
 |
| 出版日期 | 2016 |
| 卷号 | 8期号:45页码:18995-19003 |
| ISSN号 | 2040-3364 |
| DOI | 10.1039/c6nr05638e |
| 通讯作者 | Zhao, HQ ; Zhou, DH ; Feng, SL (reprint author), Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Beijing, Peoples R China. ; Mao, YL (reprint author), Xiangtan Univ, Sch Phys & Optoelect Engn, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China. |
| 英文摘要 | We developed a non-mechanical straining method to simultaneously modulate the bandgap and photoluminescence (PL) quantum efficiency of a synthesized molybdenum disulfide (MoS2) monolayer on SiO2, by vacuum annealing and subsequent quick cooling in ethanol. Influences of the thermal treatments at different temperatures from 100 degrees C to 600 degrees C on the PL and Raman spectra of the MoS2 monolayers are reported. A maximum PL peak intensity, twice that of the untreated counterparts under the same measurement conditions, was observed at the treating temperature of 200 degrees C. At the same time, approximately permanent tensile strains were induced, due to the quick cooling from high temperatures, which led to a red-shift of the direct optical bandgap. Modulation of the bandgap was achieved by changing the treating temperatures; nearly linear PL and Raman frequency shifts of similar to 3.82 meV per 100 degrees C and similar to-0.28 cm(-1)/100 degrees C for A exciton photoluminescence and Raman E-2g(1) mode frequency were observed, respectively. The proposed thermal modulation promises a wide range of applications in functional 2D nanodevices and semiconductors. To our knowledge, our findings constitute the first demonstration of thermal engineering by combinational manipulation of annealing and quick cooling of the 2D transitionmetal dichalcogenides. |
| 资助项目 | Chongqing Science and Technology Commission[cstc2013jcyjC40001] ; Chongqing institute of green and intelligent technology, Chinese academy of sciences[Y41Z030W10] ; state key joint laboratory of integrated optoelectronics, China[IOSKL2013KF06] ; national natural science foundation of China[11374251] ; national natural science foundation of China[11471280] ; national natural science foundation of China[11547105] ; CAS "Light of West China" Program |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000387859800022 |
| 出版者 | ROYAL SOC CHEMISTRY |
| 源URL | [http://119.78.100.138/handle/2HOD01W0/3059]  |
| 专题 | 量子信息技术研究中心 微纳制造与系统集成研究中心 |
| 通讯作者 | Zhao, Hong-Quan; Zhou, Dahua; Feng, Shuanglong; Mao, Yuliang |
| 作者单位 | 1.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Beijing, Peoples R China 2.Xiangtan Univ, Sch Phys & Optoelect Engn, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, Hong-Quan,Mao, Xin,Zhou, Dahua,et al. Bandgap modulation of MoS2 monolayer by thermal annealing and quick cooling[J]. NANOSCALE,2016,8(45):18995-19003. |
| APA | Zhao, Hong-Quan.,Mao, Xin.,Zhou, Dahua.,Feng, Shuanglong.,Shi, Xuan.,...&Mao, Yuliang.(2016).Bandgap modulation of MoS2 monolayer by thermal annealing and quick cooling.NANOSCALE,8(45),18995-19003. |
| MLA | Zhao, Hong-Quan,et al."Bandgap modulation of MoS2 monolayer by thermal annealing and quick cooling".NANOSCALE 8.45(2016):18995-19003. |
入库方式： OAI收割
来源：重庆绿色智能技术研究院
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