中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Ultrafast growth of large-area monolayer MoS2. film via gold foil assistant CVD for a. highly. sensitive photodetector

文献类型:期刊论文

作者Nie, Changbin1; Yu, Leyong1; Wei, Xingzhan1; Shen, Jun1; Lu, Wenqiang1; Chen, Weimin2; Feng, Shuanglong1; Shi, Haofei1
刊名NANOTECHNOLOGY
出版日期2017-07-07
卷号28期号:27页码:8
ISSN号0957-4484
关键词MoS2 large area gold assistant thermal simulation photodector
DOI10.1088/1361-6528/aa7473
通讯作者Feng, SL (reprint author), Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Micronano Mfg & Syst Integrat Ctr, Chongqing 400714, Peoples R China. ; Chen, WM (reprint author), Wuhan Inst Technol, Sch Chem Engn & Pharm, Key Lab Green Chem Proc, Minist Educ, Wuhan 430205, Peoples R China.
英文摘要Two-dimensional molybdenum disulfide (MoS2) is a promising material for ultrasensitive photodetectors owing to its tunable band gap and high absorption coefficient. However, controlled synthesis of high-quality, large-area monolayer molybdenum disulfide (MoS2) is still a challenge in practical application. In this work, we report a gold foil assistant chemical vapor deposition method for the synthesis. of large-size (> 400 mu m) single-crystal MoS2 film on a. silicon dioxide (SiO2) substrate. The influence of Au foil in enlarging the size of single-crystal MoS2. is. investigated systemically using thermal simulation in Ansys workbench 16.0, including thermal conductivity, temperature difference and thermal relaxation time of the interface of SiO2 substrate and Au foil, which indicate that Au foil can. increase the temperature of the SiO2 substrate rapidly and decrease the temperature difference between the oven and substrate. Finally, the properties of the monolayer MoS2 film are. further confirmed using back-gated field-effect transistors: a high photoresponse of 15.6 AW(-1) and a fast photoresponse time of 100 ms. The growth techniques described in this study could be beneficial for the development of other atomically thin two-dimensional transition metal dichalcogenide. materials.
资助项目National Natural Science Foundation of China[61605207] ; National Natural Science Foundation of China[31501084] ; National Natural Science Foundation of China[11574308] ; National Natural Science Foundation of China[11374359] ; Chongqing Scientific research Foundation[Cstc2016jcyjA0314] ; Chongqing Scientific research Foundation[Cstc2015jcyj BX 0046]
WOS研究方向Science & Technology - Other Topics ; Materials Science ; Physics
语种英语
出版者IOP PUBLISHING LTD
WOS记录号WOS:000403881200002
源URL[http://172.16.51.4:88/handle/2HOD01W0/191]  
专题微纳制造与系统集成研究中心
通讯作者Chen, Weimin; Feng, Shuanglong
作者单位1.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Micronano Mfg & Syst Integrat Ctr, Chongqing 400714, Peoples R China
2.Wuhan Inst Technol, Sch Chem Engn & Pharm, Key Lab Green Chem Proc, Minist Educ, Wuhan 430205, Peoples R China
推荐引用方式
GB/T 7714
Nie, Changbin,Yu, Leyong,Wei, Xingzhan,et al. Ultrafast growth of large-area monolayer MoS2. film via gold foil assistant CVD for a. highly. sensitive photodetector[J]. NANOTECHNOLOGY,2017,28(27):8.
APA Nie, Changbin.,Yu, Leyong.,Wei, Xingzhan.,Shen, Jun.,Lu, Wenqiang.,...&Shi, Haofei.(2017).Ultrafast growth of large-area monolayer MoS2. film via gold foil assistant CVD for a. highly. sensitive photodetector.NANOTECHNOLOGY,28(27),8.
MLA Nie, Changbin,et al."Ultrafast growth of large-area monolayer MoS2. film via gold foil assistant CVD for a. highly. sensitive photodetector".NANOTECHNOLOGY 28.27(2017):8.

入库方式: OAI收割

来源:重庆绿色智能技术研究院

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