High-performance Schottky heterojunction photodetector with directly grown graphene nanowalls as electrodes
文献类型：期刊论文
| 作者 | Shen, Jun1 ; Liu, Xiangzhi1,2; Song, Xuefen1; Li, Xinming3; Wang, Jun4; Zhou, Quan1; Luo, Shi1; Feng, Wenlin2; Wei, Xingzhan1; Lu, Shirong1
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| 刊名 | NANOSCALE
 |
| 出版日期 | 2017-05-14 |
| 卷号 | 9期号:18页码:6020-6025 |
| ISSN号 | 2040-3364 |
| DOI | 10.1039/c7nr00573c |
| 通讯作者 | Shi, HF ; Wei, DP (reprint author), Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing Key Lab Multiscale Mfg Technol, Chongqing 400714, Peoples R China. |
| 英文摘要 | Schottky heterojunctions based on graphene-silicon structures are promising for high-performance photodetectors. However, existing fabrication processes adopt transferred graphene as electrodes, limiting process compatibility and generating pollution because of the metal catalyst. In this report, photodetectors are fabricated using directly grown graphene nanowalls (GNWs) as electrodes. Due to the metal-free growth process, GNWs-Si heterojunctions with an ultralow measured current noise of 3.1 fA Hz(-1/2) are obtained, and the as-prepared photodetectors demonstrate specific detectivities of 5.88 x 10(13) cm Hz(1/2) W-1 and 2.27 x 10(14) cm Hz(1/2) W-1 based on the measured and calculated noise current, respectively, under ambient conditions. These are among the highest reported values for planar silicon Schottky photodetectors. In addition, an on/off ratio of 2 x 10(7), time response of 40 mu s, cut-off frequency of 8.5 kHz and responsivity of 0.52 A W-1 are simultaneously realized. The ultralow current noise is attributed to the excellent junction quality with a barrier height of 0.69 eV and an ideal factor of 1.18. Furthermore, obvious infrared photoresponse is observed in blackbody tests, and potential applications based on the photo-thermionic effect are discussed. |
| 资助项目 | Fundamental and Advanced Research Project (Key Program) of ChongQing Municipality[CSTC2015jcyjbx0046] ; NSFC[11404329] ; NSFC[61504148] ; NSFC[61306079] ; NSFC[51402291] ; NSFC[51574054] ; Natural Science Foundation Project of CQ CSTC[CSTC2014jcyjjq50004] ; National High-tech R&D Program of China (863 Program)[2015AA034801] ; Program for Innovation Team Building at Institutions of Higher Education in Chongqing[CXTDX201601030] |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000401146200031 |
| 出版者 | ROYAL SOC CHEMISTRY |
| 源URL | [http://172.16.51.4:88/handle/2HOD01W0/228]  |
| 专题 | 微纳制造与系统集成研究中心 有机半导体材料研究中心 |
| 通讯作者 | Shi, Haofei; Wei, Dapeng |
| 作者单位 | 1.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing Key Lab Multiscale Mfg Technol, Chongqing 400714, Peoples R China 2.Chongqing Univ Technol, Dept Appl Phys, Chongqing 400054, Peoples R China 3.Chinese Univ Hong Kong, Dept Elect Engn, Hong Kong, Hong Kong, Peoples R China 4.Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Sch Optoelect Informat, Chengdu 610054, Sichuan, Peoples R China |
| 推荐引用方式 GB/T 7714 | Shen, Jun,Liu, Xiangzhi,Song, Xuefen,et al. High-performance Schottky heterojunction photodetector with directly grown graphene nanowalls as electrodes[J]. NANOSCALE,2017,9(18):6020-6025. |
| APA | Shen, Jun.,Liu, Xiangzhi.,Song, Xuefen.,Li, Xinming.,Wang, Jun.,...&Wei, Dapeng.(2017).High-performance Schottky heterojunction photodetector with directly grown graphene nanowalls as electrodes.NANOSCALE,9(18),6020-6025. |
| MLA | Shen, Jun,et al."High-performance Schottky heterojunction photodetector with directly grown graphene nanowalls as electrodes".NANOSCALE 9.18(2017):6020-6025. |
入库方式： OAI收割
来源：重庆绿色智能技术研究院
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