Boron Nitride Nanosheets and Their Electrical Tunneling Effect
文献类型：期刊论文
| 作者 | Feng, Peter1,2; Li, Eric Yiming1,2; Sajjad, Muhammad1,2; Aldalbahi, Ali3,4; Chu, Jin5
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| 刊名 | SCIENCE OF ADVANCED MATERIALS
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| 出版日期 | 2015-07-01 |
| 卷号 | 7期号:7页码:1326-1330 |
| 关键词 | 2D Nanosheets Sheet Structure Tunneling Effect |
| ISSN号 | 1947-2935 |
| DOI | 10.1166/sam.2015.2048 |
| 通讯作者 | Feng, P (reprint author), Univ Puerto Rico, Inst Funct Nanomat, Coll Nat Sci, San Juan, PR 00936 USA. |
| 英文摘要 | This paper reports on the synthesis and electrical properties 2-dimensional boron nitride nanosheets (BNNSs). Scanning electron microscope (SEM), transmission electron microscope (TEM), Raman scattering, and XRD have been used to characterize the obtained BNNSs. The average size of continuous BNNS is more than 200 mu m(2). Each BNNS has clear-cut shapes at the edge with an exact 120 degrees angle at the corners that are directly related to high quality of crystalline structures. However, once beyond a critical thickness, continuous growth yields an opaque boron nitride layer/sheet with random edge structure at the surface of the sample. This clearly indicates that to simply increase deposition duration does not help to have mass production of high-quality BNNSs. After synthesis, electrical properties of different thicknesses BNNSs are characterized, from which the similar order (rho similar to 10(6) ohm-m) of the resistivities are obtained. This value is much lower than 10(13) ohm-m of commercial pyrolytic BN bulk materials. In contrast in super thin BNNS cases, its resistivity dramatically drops down to 4.2 x 10(2) Omega-m, indicating the electrical properties of super thin BNNSs are dominated by the quantum tunneling effect. |
| 资助项目 | NASA-PR-EPSCoR seed grant (NASA)[NNX10AM80H] ; NASA-PR-EPSCoR seed grant (NASA)[NNX13AB22A] ; Army research office/DoD grant[62826-RT-REP] ; visiting professor program/KSU at KSA ; King Saud University, Deanship of Scientific Research, College of Science Research Center |
| WOS研究方向 | Science & Technology - Other Topics ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000351892200015 |
| 出版者 | AMER SCIENTIFIC PUBLISHERS |
| 源URL | [http://119.78.100.138/handle/2HOD01W0/1536]  |
| 专题 | 微纳制造与系统集成研究中心 |
| 通讯作者 | Feng, Peter |
| 作者单位 | 1.Univ Puerto Rico, Inst Funct Nanomat, Coll Nat Sci, San Juan, PR 00936 USA 2.Univ Puerto Rico, Dept Phys, Coll Nat Sci, San Juan, PR 00936 USA 3.KSU, King Abdullah Inst Nanotechnol, Riyadh 11451, Saudi Arabia 4.KSU, Dept Chem, Riyadh 11451, Saudi Arabia 5.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China |
| 推荐引用方式 GB/T 7714 | Feng, Peter,Li, Eric Yiming,Sajjad, Muhammad,et al. Boron Nitride Nanosheets and Their Electrical Tunneling Effect[J]. SCIENCE OF ADVANCED MATERIALS,2015,7(7):1326-1330. |
| APA | Feng, Peter,Li, Eric Yiming,Sajjad, Muhammad,Aldalbahi, Ali,&Chu, Jin.(2015).Boron Nitride Nanosheets and Their Electrical Tunneling Effect.SCIENCE OF ADVANCED MATERIALS,7(7),1326-1330. |
| MLA | Feng, Peter,et al."Boron Nitride Nanosheets and Their Electrical Tunneling Effect".SCIENCE OF ADVANCED MATERIALS 7.7(2015):1326-1330. |
入库方式： OAI收割
来源：重庆绿色智能技术研究院
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