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Catalyst-Free, Selective Growth of ZnO Nanowires on SiO2 by Chemical Vapor Deposition for Transfer-Free Fabrication of UV Photodetectors

文献类型：期刊论文

作者Xu, Liping1,2,3; Li, Xin2,3; Zhan, Zhaoyao2,3; Wang, Lian2,3; Feng, Shuanglong2,3; Chai, Xiangyu1; Lu, Wenqiang2,3; Shen, Jun2,3; Weng, Zhankun1; Sun, Jie4
刊名ACS APPLIED MATERIALS & INTERFACES
出版日期2015-09-16
卷号7期号:36页码:20264-20271
关键词catalyst-free transfer-free ZnO nanowires UV photodetector
ISSN号1944-8244
DOI10.1021/acsami.5b05811
通讯作者Weng, ZK (reprint author), Changchun Univ Sci & Technol, Sch Elect & Informat Engn, Changchun 130022, Jilin, Peoples R China.
英文摘要Catalyst-free, selective growth of ZnO nanowires directly on the commonly used dielectric SiO2 layer is of both scientific significance and application importance, yet it is still a challenge. Here, we report a facile method to grow single-crystal ZnO nanowires on a large scale directly on SiO2/Si substrate through vapor solid mechanism without using any predeposited metal catalyst or seed layer. We found that a rough SiO2/Si substrate surface created by the reactive ion etching is critical for ZnO growth without using catalyst. ZnO nanowire array exclusively grows in area etched by the reactive ion etching method. The advantages of this method include facile and safe roughness-assisted catalyst-free growth of ZnO nanowires on SiO2/Si substrate and the subsequent transfer-free fabrication of electronic or optoelectronic devices. The ZnO nanowire UV photodetector fabricated by a transfer-free process presented high performance in responsivity, quantum efficiency and response speed, even without any post-treatments. The strategy shown here would greatly reduce the complexity in nanodevice fabrication and give an impetus to the application of ZnO nanowires in nanoelectronics and optoelectronics.
资助项目National Natural Science Foundation of China[51402290] ; Beijing Natural Science Foundation[4152003]
WOS研究方向Science & Technology - Other Topics ; Materials Science
语种英语
WOS记录号WOS:000361501700047
出版者AMER CHEMICAL SOC
源URL[http://119.78.100.138/handle/2HOD01W0/1902]  
专题微纳制造与系统集成研究中心
通讯作者Weng, Zhankun
作者单位1.Changchun Univ Sci & Technol, Sch Elect & Informat Engn, Changchun 130022, Jilin, Peoples R China
2.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
3.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing Key Lab Multiscale Mfg Technol, Chongqing 400714, Peoples R China
4.Beijing Univ Technol, Coll Elect Informat & Control Engn, Beijing 100124, Peoples R China
推荐引用方式
GB/T 7714		 Xu, Liping,Li, Xin,Zhan, Zhaoyao,et al. Catalyst-Free, Selective Growth of ZnO Nanowires on SiO2 by Chemical Vapor Deposition for Transfer-Free Fabrication of UV Photodetectors[J]. ACS APPLIED MATERIALS & INTERFACES,2015,7(36):20264-20271.
APA Xu, Liping.,Li, Xin.,Zhan, Zhaoyao.,Wang, Lian.,Feng, Shuanglong.,...&Sun, Jie.(2015).Catalyst-Free, Selective Growth of ZnO Nanowires on SiO2 by Chemical Vapor Deposition for Transfer-Free Fabrication of UV Photodetectors.ACS APPLIED MATERIALS & INTERFACES,7(36),20264-20271.
MLA Xu, Liping,et al."Catalyst-Free, Selective Growth of ZnO Nanowires on SiO2 by Chemical Vapor Deposition for Transfer-Free Fabrication of UV Photodetectors".ACS APPLIED MATERIALS & INTERFACES 7.36(2015):20264-20271.

入库方式： OAI收割

来源：重庆绿色智能技术研究院

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