Layers dependent dielectric properties of two dimensional hexagonal boron nitridenanosheets
文献类型：期刊论文
| 作者 | Wang, Liang1,2 ; Pu, Yayun1,2; Soh, Ai Kah3; Shi, Yuping4; Liu, Shuangyi1,2
|
| 刊名 | AIP ADVANCES
 |
| 出版日期 | 2016-12-01 |
| 卷号 | 6期号:12页码:6 |
| ISSN号 | 2158-3226 |
| DOI | 10.1063/1.4973566 |
| 通讯作者 | Liu, SY (reprint author), Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, 266 Fangzheng Ave, Chongqing, Peoples R China. ; Liu, SY (reprint author), Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing Key Lab Multiscale Mfg Technol, Chongqing 400714, Peoples R China. |
| 英文摘要 | Two dimensional (2D) boron nitride (h-BN) nanosheets are well known as their tunable electric properties and well compatible with graphene. Studying the dielectric properties carefully is essential for their promised applications. Most previous first principle studies treated 2D h-BN as a strict 2D system, where the contribution of ion polarization is neglected. The results show obvious deviation from experimental values, and the situations are worse with the stacking layer increasing. Thus, in present works, the dielectric properties of 2D h-BN nanosheets are studied with involving the ion contributions appropriately. The evolution of dielectric performance with stacking layers varying is also studied. Obvious layer dependent anisotropic dielectric properties are predicted, which reaches the bulk h-BN level as the thickness approaching 5.8nm (20L). There should be a balance between dielectric properties and the thickness (stacking layers) for the dielectric applications of 2D h-BN nanosheets. (C) 2016 Author(s). |
| 资助项目 | program of Hundreds talents of Chinese Academy of Sciences[R52A261Z10] ; Fundamental and advanced technology Research Funds of Chongqing[cstc2015jcyjbx0103] ; Nature Science Foundation of China(NSFC)-GuangDong Government unite Foundation Supercomputing scientific applied research projects[nsfc2015-475] |
| WOS研究方向 | Science & Technology - Other Topics ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000392091500095 |
| 出版者 | AMER INST PHYSICS |
| 源URL | [http://119.78.100.138/handle/2HOD01W0/3236]  |
| 专题 | 微纳制造与系统集成研究中心 |
| 通讯作者 | Liu, Shuangyi |
| 作者单位 | 1.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, 266 Fangzheng Ave, Chongqing, Peoples R China 2.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing Key Lab Multiscale Mfg Technol, Chongqing 400714, Peoples R China 3.Monash Univ Malaysia, Sch Engn, Bandar Sunway, Selangor, Malaysia 4.Hong Kong Univ Sci & Technol, Dept Mech & Aerosp Engn, Hong Kong, Hong Kong, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Liang,Pu, Yayun,Soh, Ai Kah,et al. Layers dependent dielectric properties of two dimensional hexagonal boron nitridenanosheets[J]. AIP ADVANCES,2016,6(12):6. |
| APA | Wang, Liang,Pu, Yayun,Soh, Ai Kah,Shi, Yuping,&Liu, Shuangyi.(2016).Layers dependent dielectric properties of two dimensional hexagonal boron nitridenanosheets.AIP ADVANCES,6(12),6. |
| MLA | Wang, Liang,et al."Layers dependent dielectric properties of two dimensional hexagonal boron nitridenanosheets".AIP ADVANCES 6.12(2016):6. |
入库方式： OAI收割
来源：重庆绿色智能技术研究院
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