Highly responsive and broadband photodetectors based on WS2-graphene van der Waals epitaxial heterostructures
文献类型：期刊论文
| 作者 | Lan, Changyong1,2; Li, Chun1,2; Wang, Shuai1,2; He, Tianying1,2; Zhou, Zhifei1,2; Wei, Dapeng3 ; Guo, Huayang1,2; Yang, Hao4; Liu, Yong1,2
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| 刊名 | JOURNAL OF MATERIALS CHEMISTRY C
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| 出版日期 | 2017 |
| 卷号 | 5期号:6页码:1494-1500 |
| ISSN号 | 2050-7526 |
| DOI | 10.1039/c6tc05037a |
| 通讯作者 | Li, C (reprint author), Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China. ; Li, C (reprint author), Univ Elect Sci & Technol China, Sch Optoelect Informat, Chengdu 610054, Peoples R China. |
| 英文摘要 | van der Waals heterostructures built from two-dimensional (2D) materials have attracted wide attention because of their fascinating electrical and optoelectronic properties. Here, we report a highly responsive and broadband photodetector based on WS2-graphene van der Waals epitaxial heterostructures, which were fabricated by directly growing single crystalline few layer WS2 nanosheets on a polycrystalline graphene film. Upon light illumination, the current apparently reduces because of the transfer of photogenerated electrons from WS2 into the underlying p-type graphene and a photo-gating effect induced by the remaining holes, which is in stark contrast to ordinary semiconducting photoconductors. Thanks to the strong and broadband absorption of WS2, the WS2-graphene heterostructure photodetector exhibits a high responsivity with a maximum of 950 A W-1 at 405 nm and a wide spectrum response ranging from 340 to 680 nm. The high performance can be attributed to the internal built-in electric field at the WS2-graphene interface, which leads to the efficient separation of photogenerated electron-hole pairs. The WS2-graphene heterostructure photodetector may have potential applications in low cost, broadband, and flexible optoelectronics. |
| 资助项目 | Natural Science Foundation of China[61421002] ; Natural Science Foundation of China[61106040] ; Natural Science Foundation of China[61605024] ; Natural Science Foundation of China[61475030] ; Program for New Century Excellent Talents in University[NCET-13-0092] ; State Key Laboratory of Electronic Thin Film and Integrated Device Program[KFJJ201408] ; Central University Basic Scientific Research Business Expenses[ZYGX2015Z001] |
| WOS研究方向 | Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000395888900025 |
| 出版者 | ROYAL SOC CHEMISTRY |
| 源URL | [http://119.78.100.138/handle/2HOD01W0/3427]  |
| 专题 | 微纳制造与系统集成研究中心 |
| 通讯作者 | Li, Chun |
| 作者单位 | 1.Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China 2.Univ Elect Sci & Technol China, Sch Optoelect Informat, Chengdu 610054, Peoples R China 3.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing Key Lab Multiscale Mfg Technol, Chongqing 400714, Peoples R China 4.Wuhan Inst Technol, Sch Chem Engn & Pharm, Minist Educ, Key Lab Green Chem Proc, Wuhan 430073, Hubei, Peoples R China |
| 推荐引用方式 GB/T 7714 | Lan, Changyong,Li, Chun,Wang, Shuai,et al. Highly responsive and broadband photodetectors based on WS2-graphene van der Waals epitaxial heterostructures[J]. JOURNAL OF MATERIALS CHEMISTRY C,2017,5(6):1494-1500. |
| APA | Lan, Changyong.,Li, Chun.,Wang, Shuai.,He, Tianying.,Zhou, Zhifei.,...&Liu, Yong.(2017).Highly responsive and broadband photodetectors based on WS2-graphene van der Waals epitaxial heterostructures.JOURNAL OF MATERIALS CHEMISTRY C,5(6),1494-1500. |
| MLA | Lan, Changyong,et al."Highly responsive and broadband photodetectors based on WS2-graphene van der Waals epitaxial heterostructures".JOURNAL OF MATERIALS CHEMISTRY C 5.6(2017):1494-1500. |
入库方式： OAI收割
来源：重庆绿色智能技术研究院
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