Controllable synthesis of large scale, catalyst-free, lateral ZnO nanowires network
文献类型：会议论文
| 作者 | Jian, Guan1,2; Guo, Shuxu1; Jiang, Haitao1; Gao, Fengli1; Lu, Wenqiang2 ; Wang, Deqiang2
|
| 出版日期 | 2016 |
| 会议日期 | July 18, 2016 - July 22, 2016 |
| 会议地点 | Chongqing, China |
| DOI | 10.1109/3M-NANO.2016.7824964 |
| 页码 | 39-42 |
| 英文摘要 | We report a novel method for large scale catalyst-free zinc oxide nanowires (ZnO NWs) network growth on Si substrate using chemical vapor deposition (CVD). The SiO2 layer of the Si substrate is photoetched to SiO2 square pillar array which works as the growth core of urchin-like ZnO NW lump, and the NWs cross over each other forming an integrated network. This method achieves controlled growth of lateral ZnO NW network and allows the in situ nano device fabrication. Meanwhile, the vapor deposition mechanism is discussed and confirmed by contrast experiments along with different growth conditions, which realizes growth on large size substrate. According to the result of Field Emission Scanning Electron Microscope (FE-SEM), the ZnO NWs are wurtzite hexagonal single-crystalline and the network is intact with massive intersection points. © 2016 IEEE. |
| 会议录 | 6th IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, IEEE 3M-NANO 2016
 |
| 语种 | 英语 |
| 源URL | [http://119.78.100.138/handle/2HOD01W0/4848]  |
| 专题 | 精准医疗单分子诊断技术研究中心 微纳制造与系统集成研究中心 |
| 作者单位 | 1.State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun; 130021, China; 2.Chongqing Key Laboratory of Multi-scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing; 400714, China |
| 推荐引用方式 GB/T 7714 | Jian, Guan,Guo, Shuxu,Jiang, Haitao,et al. Controllable synthesis of large scale, catalyst-free, lateral ZnO nanowires network[C]. 见:. Chongqing, China. July 18, 2016 - July 22, 2016. |
入库方式： OAI收割
来源：重庆绿色智能技术研究院
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。