中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Microscopic study of thermoelectric In-doped SnTe

文献类型:期刊论文

作者Nan,Pengfei1,2; Liu,Ruibin1; Chang,Yunjie2; Wu,Hongbo1; Wang,Yumei2; Yu,Richeng2; Shen,Jun3; Guo,Wei1; Ge,Binghui2
刊名Nanotechnology
出版日期2018-04-27
卷号29期号:26
关键词inversion domain SnTe HAADF geometry phase analysis
ISSN号0957-4484
DOI10.1088/1361-6528/aabb0f
英文摘要Abstract SnTe is a p-type thermoelectric material that is isostructural with PbTe, for which it is a potential environmentally friendly replacement. By doping the SnTe lattice with In, the thermal conductivity of SnTe can be significantly reduced and the thermoelectric conversion efficiency improved. A large number of precipitates were present in the In-doped SnTe samples; based on atomic-resolution high-angle annular dark-field images and electron energy loss spectra, these precipitates were identified as the zinc-blende phase of In2Te3. Through geometry phase analysis, a new phonon scattering mechanism is discussed.
语种英语
WOS记录号IOP:0957-4484-29-26-AABB0F
出版者IOP Publishing
源URL[http://119.78.100.138/handle/2HOD01W0/6306]  
专题微纳制造与系统集成研究中心
作者单位1.Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, People’s Republic of China
2.Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China
3.Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, People’s Republic of China
推荐引用方式
GB/T 7714
Nan,Pengfei,Liu,Ruibin,Chang,Yunjie,et al. Microscopic study of thermoelectric In-doped SnTe[J]. Nanotechnology,2018,29(26).
APA Nan,Pengfei.,Liu,Ruibin.,Chang,Yunjie.,Wu,Hongbo.,Wang,Yumei.,...&Ge,Binghui.(2018).Microscopic study of thermoelectric In-doped SnTe.Nanotechnology,29(26).
MLA Nan,Pengfei,et al."Microscopic study of thermoelectric In-doped SnTe".Nanotechnology 29.26(2018).

入库方式: OAI收割

来源:重庆绿色智能技术研究院

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