Microscopic study of thermoelectric In-doped SnTe
文献类型:期刊论文
作者 | Nan,Pengfei1,2; Liu,Ruibin1; Chang,Yunjie2; Wu,Hongbo1; Wang,Yumei2; Yu,Richeng2; Shen,Jun3![]() |
刊名 | Nanotechnology
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出版日期 | 2018-04-27 |
卷号 | 29期号:26 |
关键词 | inversion domain SnTe HAADF geometry phase analysis |
ISSN号 | 0957-4484 |
DOI | 10.1088/1361-6528/aabb0f |
英文摘要 | Abstract SnTe is a p-type thermoelectric material that is isostructural with PbTe, for which it is a potential environmentally friendly replacement. By doping the SnTe lattice with In, the thermal conductivity of SnTe can be significantly reduced and the thermoelectric conversion efficiency improved. A large number of precipitates were present in the In-doped SnTe samples; based on atomic-resolution high-angle annular dark-field images and electron energy loss spectra, these precipitates were identified as the zinc-blende phase of In2Te3. Through geometry phase analysis, a new phonon scattering mechanism is discussed. |
语种 | 英语 |
WOS记录号 | IOP:0957-4484-29-26-AABB0F |
出版者 | IOP Publishing |
源URL | [http://119.78.100.138/handle/2HOD01W0/6306] ![]() |
专题 | 微纳制造与系统集成研究中心 |
作者单位 | 1.Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, People’s Republic of China 2.Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China 3.Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, People’s Republic of China |
推荐引用方式 GB/T 7714 | Nan,Pengfei,Liu,Ruibin,Chang,Yunjie,et al. Microscopic study of thermoelectric In-doped SnTe[J]. Nanotechnology,2018,29(26). |
APA | Nan,Pengfei.,Liu,Ruibin.,Chang,Yunjie.,Wu,Hongbo.,Wang,Yumei.,...&Ge,Binghui.(2018).Microscopic study of thermoelectric In-doped SnTe.Nanotechnology,29(26). |
MLA | Nan,Pengfei,et al."Microscopic study of thermoelectric In-doped SnTe".Nanotechnology 29.26(2018). |
入库方式: OAI收割
来源:重庆绿色智能技术研究院
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