Silicon Oxide Electron-Emitting Nanodiodes
文献类型：期刊论文
| 作者 | Wu, Gongtao1,2; Li, Zhiwei1,2; Tang, Zhigiang1,2; Wei, Dapeng3 ; Zhang, Gengmin1,2; Chen, Qing1,2; Peng, Lion-Mao1,2; Wei, Xianlong1,2
|
| 刊名 | ADVANCED ELECTRONIC MATERIALS
 |
| 出版日期 | 2018-08-01 |
| 卷号 | 4期号:8页码:6 |
| 关键词 | graphene on-chip electron source resistive switching silicon oxide |
| ISSN号 | 2199-160X |
| DOI | 10.1002/aelm.201800136 |
| 英文摘要 | Electrically driven on-chip electron sources that do not need to be heated are long pursued, but their realization remains challenging. Here, it is shown that a nanogap formed by two electrodes on a silicon oxide substrate functions as an electron-emitting nanodiode after the silicon oxide in the nanogap is electrically switched to a high-resistance conducting state. A nanodiode based on graphene electrodes can be turned on by a voltage of approximate to 7 V in approximate to 100 ns and show an emission current of up to several microamperes, corresponding to an emission density of approximate to 10(6) A cm(-2) and emission efficiency as high as 16.6%. We attribute the electron emission to be generated from a metal-insulator-metal tunneling diode on the substrate surface formed by the rupture of conducting filaments in silicon oxide. An array of 100 nanodiodes exhibits a global emission density of 5 A cm(-2) and stable emission with negligible current degradation over tens of hours under modest vacuum. The combined advantages of a low operating voltage, fast temporal response, high emission density and efficiency, convenient fabrication and integration, and stable emission in modest vacuum make silicon oxide electron-emitting nanodiodes a promising on-chip electron sources. |
| 资助项目 | National Key Research and Development Program of China[2017YFA0205003] ; National Basic Research Program of China[2013CB933604] ; National Nature Science Foundation of China[61371001] ; National Nature Science Foundation of China[61621061] |
| WOS研究方向 | Science & Technology - Other Topics ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000441125200013 |
| 出版者 | WILEY |
| 源URL | [http://119.78.100.138/handle/2HOD01W0/6557]  |
| 专题 | 微纳制造与系统集成研究中心 |
| 通讯作者 | Wei, Xianlong |
| 作者单位 | 1.Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China 2.Peking Univ, Dept Elect, Beijing 100871, Peoples R China 3.Chinese Acad Sci, Chongqing Key Lab Multiscale Mfg Technol, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wu, Gongtao,Li, Zhiwei,Tang, Zhigiang,et al. Silicon Oxide Electron-Emitting Nanodiodes[J]. ADVANCED ELECTRONIC MATERIALS,2018,4(8):6. |
| APA | Wu, Gongtao.,Li, Zhiwei.,Tang, Zhigiang.,Wei, Dapeng.,Zhang, Gengmin.,...&Wei, Xianlong.(2018).Silicon Oxide Electron-Emitting Nanodiodes.ADVANCED ELECTRONIC MATERIALS,4(8),6. |
| MLA | Wu, Gongtao,et al."Silicon Oxide Electron-Emitting Nanodiodes".ADVANCED ELECTRONIC MATERIALS 4.8(2018):6. |
入库方式： OAI收割
来源：重庆绿色智能技术研究院
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。