High-Temperature Thermoelectric Properties of Ge-Substituted p-Type Nd-Filled Skutterudites
文献类型：期刊论文
| 作者 | Shaheen, Nusrat1; Shen, Xingchen1; Javed, Muhammad Sufyan1; Zhan, Heng1; Guo, Lijie1; Alsharafi, Rashed1; Huang, Tianyu1; Lu, Xu1; Wang, Guoyu2 ; Zhou, Xiaoyuan1
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| 刊名 | JOURNAL OF ELECTRONIC MATERIALS
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| 出版日期 | 2017-05-01 |
| 卷号 | 46期号:5页码:2958-2963 |
| 关键词 | p-Type skutterudites Ge doping Nd filler thermoelectric properties |
| ISSN号 | 0361-5235 |
| DOI | 10.1007/s11664-016-5079-z |
| 通讯作者 | Zhou, XY (reprint author), Chongqing Univ, Dept Appl Phys, Chongqing 400044, Peoples R China. |
| 英文摘要 | To clarify the influence of Ge substitution on the electrical transport properties of Nd-filled p-type skutterudites, a series of Nd0.9Fe2Co2Sb12-x Ge (x) compounds with compositions x = 0, 0.1, 0.2, 0.3, and 0.4 were synthesized by a solid-state reaction method followed by a spark plasma sintering process. The crystal structure of the prepared samples was characterized by x-ray diffraction analysis, revealing successful formation of skutterudites as main pure phase. The electrical and thermal transport properties were investigated as a function of Ge doping content for fixed Nd filler content. All samples possessed positive Seebeck coefficient, indicating effective p-type behavior. The lightly doped samples (x = 0.1 and 0.2) showed higher figurea of pound merit over the entire temperature range, with the x = 0.2 sample showing the highest ZT value of 0.56 at 674 K, 40% higher than that of the Ge-free sample. The enhancement in ZT can be ascribed to the optimized carrier concentration and reduced thermal conductivity. However, further increase of the Ge content resulted in second phase in the matrix, lowering the overall ZT. The large enhancement of ZT through Ge doping indicates that these compounds may have great potential for application as p-type segments of thermoelectric devices. |
| 资助项目 | National Natural Science Foundation of China[11344010] ; National Natural Science Foundation of China[11404044] ; National Natural Science Foundation of China[51472036] ; Fundamental Research Funds for the Central Universities[CQDXWL-2013-Z010] ; One Hundred Person Project of the Chinese Academy of Sciences[2013-46] |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000398937900058 |
| 出版者 | SPRINGER |
| 源URL | [http://172.16.51.4:88/handle/2HOD01W0/238]  |
| 专题 | 机器人与3D打印技术创新中心 |
| 通讯作者 | Zhou, Xiaoyuan |
| 作者单位 | 1.Chongqing Univ, Dept Appl Phys, Chongqing 400044, Peoples R China 2.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China |
| 推荐引用方式 GB/T 7714 | Shaheen, Nusrat,Shen, Xingchen,Javed, Muhammad Sufyan,et al. High-Temperature Thermoelectric Properties of Ge-Substituted p-Type Nd-Filled Skutterudites[J]. JOURNAL OF ELECTRONIC MATERIALS,2017,46(5):2958-2963. |
| APA | Shaheen, Nusrat.,Shen, Xingchen.,Javed, Muhammad Sufyan.,Zhan, Heng.,Guo, Lijie.,...&Zhou, Xiaoyuan.(2017).High-Temperature Thermoelectric Properties of Ge-Substituted p-Type Nd-Filled Skutterudites.JOURNAL OF ELECTRONIC MATERIALS,46(5),2958-2963. |
| MLA | Shaheen, Nusrat,et al."High-Temperature Thermoelectric Properties of Ge-Substituted p-Type Nd-Filled Skutterudites".JOURNAL OF ELECTRONIC MATERIALS 46.5(2017):2958-2963. |
入库方式： OAI收割
来源：重庆绿色智能技术研究院
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