中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页 机构 成果 学者
  
  1. CAS IR Grid
  2. 重庆绿色智能技术研究院
  3. 中国科学院重庆绿色智能技术研究院
  4. 机器人与3D打印技术创新中心
Se Vacancy Effect on the Thermoelectric Performance of Pb-Doped In4Pb0.01Se3-x Polycrystalline

文献类型：期刊论文

作者Alsharafi, Rashed1; Zhan, Heng1; Shaheen, Nusrat1; Lu, Xu1; Wang, Guoyu2; Sun, Xiaonan1; Zhou, Xiaoyuan1
刊名JOURNAL OF ELECTRONIC MATERIALS
出版日期2017-05-01
卷号46期号:5页码:3131-3136
关键词Indium selenide Se vacancy layered structure low thermal conductivity
ISSN号0361-5235
DOI10.1007/s11664-016-5218-6
通讯作者Sun, XN ; Zhou, XY (reprint author), Chongqing Univ, Dept Appl Phys, Chongqing 400044, Peoples R China.
英文摘要Indium selenides have been considered as highly efficient thermoelectric materials due to their excellent electrical and thermal properties. Herein, we report the effect of Se vacancy on the thermoelectric performance of Pb-doped In4Pb0.01Se3-x polycrystalline (x = 0, 0.03, 0.07, and 0.1) synthesized by solid state reaction followed by spark plasma sintering. The obtained products are characterized by x-ray powder diffraction, scanning electron microscopy, and transmission electron microscopy. Owing to the increase of Se vacancy in Pb-doped compounds, the electrical resistivity is reduced by increasing carrier concentration along with the reduction of the lattice thermal conductivity. Ultimately, the In4Pb0.01Se3-x (x = 0.07) exhibits a high ZT value of 0.95 at 690 K.
资助项目National Natural Science Foundation of China[11404044] ; National Natural Science Foundation of China[51472036] ; National Natural Science Foundation of China[11344010] ; 100 Talent Program of the Chinese Academy of Sciences[2013-46]
WOS研究方向Engineering ; Materials Science ; Physics
语种英语
WOS记录号WOS:000398937900084
出版者SPRINGER
源URL[http://172.16.51.4:88/handle/2HOD01W0/239]  
专题机器人与3D打印技术创新中心
通讯作者Sun, Xiaonan; Zhou, Xiaoyuan
作者单位1.Chongqing Univ, Dept Appl Phys, Chongqing 400044, Peoples R China
2.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
推荐引用方式
GB/T 7714		 Alsharafi, Rashed,Zhan, Heng,Shaheen, Nusrat,et al. Se Vacancy Effect on the Thermoelectric Performance of Pb-Doped In4Pb0.01Se3-x Polycrystalline[J]. JOURNAL OF ELECTRONIC MATERIALS,2017,46(5):3131-3136.
APA Alsharafi, Rashed.,Zhan, Heng.,Shaheen, Nusrat.,Lu, Xu.,Wang, Guoyu.,...&Zhou, Xiaoyuan.(2017).Se Vacancy Effect on the Thermoelectric Performance of Pb-Doped In4Pb0.01Se3-x Polycrystalline.JOURNAL OF ELECTRONIC MATERIALS,46(5),3131-3136.
MLA Alsharafi, Rashed,et al."Se Vacancy Effect on the Thermoelectric Performance of Pb-Doped In4Pb0.01Se3-x Polycrystalline".JOURNAL OF ELECTRONIC MATERIALS 46.5(2017):3131-3136.

入库方式： OAI收割

来源：重庆绿色智能技术研究院

浏览0
下载0
收藏0
其他版本

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。