Se Vacancy Effect on the Thermoelectric Performance of Pb-Doped In4Pb0.01Se3-x Polycrystalline
文献类型:期刊论文
作者 | Alsharafi, Rashed1; Zhan, Heng1; Shaheen, Nusrat1; Lu, Xu1; Wang, Guoyu2![]() |
刊名 | JOURNAL OF ELECTRONIC MATERIALS
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出版日期 | 2017-05-01 |
卷号 | 46期号:5页码:3131-3136 |
关键词 | Indium selenide Se vacancy layered structure low thermal conductivity |
ISSN号 | 0361-5235 |
DOI | 10.1007/s11664-016-5218-6 |
通讯作者 | Sun, XN ; Zhou, XY (reprint author), Chongqing Univ, Dept Appl Phys, Chongqing 400044, Peoples R China. |
英文摘要 | Indium selenides have been considered as highly efficient thermoelectric materials due to their excellent electrical and thermal properties. Herein, we report the effect of Se vacancy on the thermoelectric performance of Pb-doped In4Pb0.01Se3-x polycrystalline (x = 0, 0.03, 0.07, and 0.1) synthesized by solid state reaction followed by spark plasma sintering. The obtained products are characterized by x-ray powder diffraction, scanning electron microscopy, and transmission electron microscopy. Owing to the increase of Se vacancy in Pb-doped compounds, the electrical resistivity is reduced by increasing carrier concentration along with the reduction of the lattice thermal conductivity. Ultimately, the In4Pb0.01Se3-x (x = 0.07) exhibits a high ZT value of 0.95 at 690 K. |
资助项目 | National Natural Science Foundation of China[11404044] ; National Natural Science Foundation of China[51472036] ; National Natural Science Foundation of China[11344010] ; 100 Talent Program of the Chinese Academy of Sciences[2013-46] |
WOS研究方向 | Engineering ; Materials Science ; Physics |
语种 | 英语 |
WOS记录号 | WOS:000398937900084 |
出版者 | SPRINGER |
源URL | [http://172.16.51.4:88/handle/2HOD01W0/239] ![]() |
专题 | 机器人与3D打印技术创新中心 |
通讯作者 | Sun, Xiaonan; Zhou, Xiaoyuan |
作者单位 | 1.Chongqing Univ, Dept Appl Phys, Chongqing 400044, Peoples R China 2.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China |
推荐引用方式 GB/T 7714 | Alsharafi, Rashed,Zhan, Heng,Shaheen, Nusrat,et al. Se Vacancy Effect on the Thermoelectric Performance of Pb-Doped In4Pb0.01Se3-x Polycrystalline[J]. JOURNAL OF ELECTRONIC MATERIALS,2017,46(5):3131-3136. |
APA | Alsharafi, Rashed.,Zhan, Heng.,Shaheen, Nusrat.,Lu, Xu.,Wang, Guoyu.,...&Zhou, Xiaoyuan.(2017).Se Vacancy Effect on the Thermoelectric Performance of Pb-Doped In4Pb0.01Se3-x Polycrystalline.JOURNAL OF ELECTRONIC MATERIALS,46(5),3131-3136. |
MLA | Alsharafi, Rashed,et al."Se Vacancy Effect on the Thermoelectric Performance of Pb-Doped In4Pb0.01Se3-x Polycrystalline".JOURNAL OF ELECTRONIC MATERIALS 46.5(2017):3131-3136. |
入库方式: OAI收割
来源:重庆绿色智能技术研究院
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