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Intriguing substitution of conducting layer triggered enhancement of thermoelectric performance in misfit-layered (SnS)(1.2)(TiS2)(2)

文献类型：期刊论文

作者Yin, Cong1; Hu, Qing1; Wang, Guoyu2; Huang, Tianyu2; Zhou, Xiaoyuan3; Zhang, Xiong3; Dou, Yunwei4; Kang, Bin4; Tang, Jun1,5; Liu, Ning1
刊名APPLIED PHYSICS LETTERS
出版日期2017-01-23
卷号110期号:4页码:5
ISSN号0003-6951
DOI10.1063/1.4975228
通讯作者Liu, N ; Ang, R (reprint author), Sichuan Univ, Inst Nucl Sci & Technol, Key Lab Radiat Phys & Technol, Minist Educ, Chengdu 610064, Peoples R China. ; Ang, R (reprint author), Sichuan Univ, Inst New Energy & Low Carbon Technol, Chengdu 610065, Peoples R China.
英文摘要We have systematically investigated the thermoelectric properties of misfit-layered chalcogenide (SnS)(1.2)(TiS2)(2). Surprisingly, an unexpected Cu and Co substitution in the conducting TiS2 layer, acceptor dopant, can induce an exotic enhancement of thermoelectric performance. In particular, the value of dimensionless figure of merit ZT has increased by 33.3% and up to 0.42 at 720K for Cu-substituted (SnS)(1.2)(Cu0.02Ti0.98S2)(2). The present findings demonstrate that large effective mass and low carrier concentration are responsible for the emergence of large Seebeck coefficient and high power factor. Furthermore, the enhanced disorder effect due to the substitution accounts for the decrease of electronic thermal conductivity, while the increased phonon scattering of interlayer between SnS and TiS2 layers leads to the reduction of phononic thermal conductivity. Consequently, the Cu-and Co-substituted (SnS)(1.2)(TiS2)(2) could be considered as a promising candidate of thermoelectric materials. Published by AIP Publishing.
资助项目Sichuan University Talent Introduction Research Funding[YJ201537] ; Sichuan University Outstanding Young Scholars Research Funding[2015SCU04A20] ; China Academy of Engineering Physics External Association Research Funding[HG2016054] ; Youth Foundation of Science and Technology Department of Sichuan Province[2016JQ0051] ; Project for Fundamental and Frontier Research in Chongqing[CSTC2015JCYJBX0026]
WOS研究方向Physics
语种英语
WOS记录号WOS:000392837300050
出版者AMER INST PHYSICS
源URL[http://172.16.51.4:88/handle/2HOD01W0/269]  
专题机器人与3D打印技术创新中心
通讯作者Liu, Ning; Ang, Ran
作者单位1.Sichuan Univ, Inst Nucl Sci & Technol, Key Lab Radiat Phys & Technol, Minist Educ, Chengdu 610064, Peoples R China
2.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
3.Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China
4.China Acad Engn Phys, Inst Chem Mat, Mianyang 621900, Peoples R China
5.Sichuan Univ, Inst New Energy & Low Carbon Technol, Chengdu 610065, Peoples R China
推荐引用方式
GB/T 7714		 Yin, Cong,Hu, Qing,Wang, Guoyu,et al. Intriguing substitution of conducting layer triggered enhancement of thermoelectric performance in misfit-layered (SnS)(1.2)(TiS2)(2)[J]. APPLIED PHYSICS LETTERS,2017,110(4):5.
APA Yin, Cong.,Hu, Qing.,Wang, Guoyu.,Huang, Tianyu.,Zhou, Xiaoyuan.,...&Ang, Ran.(2017).Intriguing substitution of conducting layer triggered enhancement of thermoelectric performance in misfit-layered (SnS)(1.2)(TiS2)(2).APPLIED PHYSICS LETTERS,110(4),5.
MLA Yin, Cong,et al."Intriguing substitution of conducting layer triggered enhancement of thermoelectric performance in misfit-layered (SnS)(1.2)(TiS2)(2)".APPLIED PHYSICS LETTERS 110.4(2017):5.

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来源：重庆绿色智能技术研究院

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