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Broad temperature plateau for high ZTs in heavily doped p-type SnSe single crystals
文献类型：期刊论文
| 作者 | Peng, Kunling1,2; Lu, Xu1; Zhan, Heng1; Hui, Si3; Tang, Xiaodan1,2; Wang, Guiwen1,2; Dai, Jiyan4; Uher, Ctirad3; Wang, Guoyu2 ; Zhou, Xiaoyuan1
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| 刊名 | ENERGY & ENVIRONMENTAL SCIENCE
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| 出版日期 | 2016 |
| 卷号 | 9期号:2页码:454-460 |
| ISSN号 | 1754-5692 |
| DOI | 10.1039/c5ee03366g |
| 通讯作者 | Zhou, XY (reprint author), Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China. ; Wang, GY (reprint author), Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China. |
| 英文摘要 | Excellent thermoelectric performance is obtained over a broad temperature range from 300 K to 800 K by doping single crystals of SnSe. The average value of the figure of merit ZT, of more than 1.17, is measured from 300 K to 800 K along the crystallographic b-axis of 3 at% Na-doped SnSe, with the maximum ZT reaching a value of 2 at 800 K. The room temperature value of the power factor for the same sample and in the same direction is 2.8 mW mK(-2), which is an order of magnitude higher than that of the undoped crystal. Calculations show that Na doping lowers the Fermi level and increases the number of carrier pockets in SnSe, leading to a collaborative optimization of the Seebeck coefficient and the electrical conductivity. The resultant optimized carrier concentration and the increased number of carrier pockets near the Fermi level in Na-doped samples are believed to be the key factors behind the spectacular enhancement of the average ZT. |
| 资助项目 | National Natural Science Foundation of China[11344010] ; National Natural Science Foundation of China[11404044] ; National Natural Science Foundation of China[51472036] ; Fundamental Research Funds[CQDXWL-2013-Z010] ; One Hundred Person Project of the Chinese Academy of Science[2013-46] ; CERC-CVC ; U.S. Department of Energy[DE-PI0000012] |
| WOS研究方向 | Chemistry ; Energy & Fuels ; Engineering ; Environmental Sciences & Ecology |
| 语种 | 英语 |
| WOS记录号 | WOS:000369744500009 |
| 出版者 | ROYAL SOC CHEMISTRY |
| 源URL | [http://119.78.100.138/handle/2HOD01W0/2216]  |
| 专题 | 机器人与3D打印技术创新中心 |
| 通讯作者 | Wang, Guoyu; Zhou, Xiaoyuan |
| 作者单位 | 1.Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China 2.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China 3.Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA 4.Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China |
| 推荐引用方式 GB/T 7714 | Peng, Kunling,Lu, Xu,Zhan, Heng,et al. Broad temperature plateau for high ZTs in heavily doped p-type SnSe single crystals[J]. ENERGY & ENVIRONMENTAL SCIENCE,2016,9(2):454-460. |
| APA | Peng, Kunling.,Lu, Xu.,Zhan, Heng.,Hui, Si.,Tang, Xiaodan.,...&Zhou, Xiaoyuan.(2016).Broad temperature plateau for high ZTs in heavily doped p-type SnSe single crystals.ENERGY & ENVIRONMENTAL SCIENCE,9(2),454-460. |
| MLA | Peng, Kunling,et al."Broad temperature plateau for high ZTs in heavily doped p-type SnSe single crystals".ENERGY & ENVIRONMENTAL SCIENCE 9.2(2016):454-460. |
入库方式： OAI收割
来源：重庆绿色智能技术研究院
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