Band engineering and precipitation enhance thermoelectric performance of SnTe with Zn-doping
文献类型:期刊论文
作者 | Chen, Zhiyu1; Wang, Ruifeng2,3; Wang, Guoyu2,3![]() |
刊名 | CHINESE PHYSICS B
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出版日期 | 2018-04-01 |
卷号 | 27期号:4页码:5 |
关键词 | thermoelectric materials chalcogenide band engineering precipitation |
ISSN号 | 1674-1056 |
DOI | 10.1088/1674-1056/27/4/047202 |
英文摘要 | We have systematically studied the thermoelectric properties in Zn-doped SnTe. Strikingly, band convergence and embedded precipitates arising from Zn doping, can trigger a prominent improvement of thermoelectric performance. In particular, the value of dimensionless figure of merit zT has increased by 100% and up to similar to 0.5 at 775 K for the optimal sample with 2% Zn content. Present findings demonstrate that carrier concentration and effective mass play crucial roles on the Seebeck coefficient and power factor. The obvious deviation from the Pisarenko line (Seebeck coefficient versus carrier concentration) due to Zn-doping reveals the convergence of valence bands. When the doping concentration exceeds the solubility, precipitates occur and lead to a reduction of lattice thermal conductivity. In addition, bipolar conduction is suppressed, indicating an enlargement of band gap. The Zn-doped SnTe is shown to be a promising candidate for thermoelectric applications. |
资助项目 | National Natural Science Foundation of China[51771126] ; Youth Foundation of Science & Technology Department of Sichuan Province, China[2016JQ0051] ; Sichuan University Talent Introduction Research Funding[YJ201537] ; Sichuan University Outstanding Young Scholars Research Funding[2015SCU04A20] ; World First-Class University Construction Funding ; Fundamental and Frontier Research in Chongqing[CSTC2015JCYJBX0026] |
WOS研究方向 | Physics |
语种 | 英语 |
WOS记录号 | WOS:000430619900002 |
出版者 | IOP PUBLISHING LTD |
源URL | [http://119.78.100.138/handle/2HOD01W0/6363] ![]() |
专题 | 机器人与3D打印技术创新中心 |
通讯作者 | Tang, Jun; Ang, Ran |
作者单位 | 1.Sichuan Univ, Inst Nucl Sci & Technol, Minist Educ, Key Lab Radiat Phys & Technol, Chengdu 610064, Sichuan, Peoples R China 2.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100190, Peoples R China 4.Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China 5.Tongji Univ, Sch Mat Sci & Engn, Shanghai 201804, Peoples R China 6.Sichuan Univ, Inst New Energy & Low Carbon Technol, Chengdu 610065, Sichuan, Peoples R China |
推荐引用方式 GB/T 7714 | Chen, Zhiyu,Wang, Ruifeng,Wang, Guoyu,et al. Band engineering and precipitation enhance thermoelectric performance of SnTe with Zn-doping[J]. CHINESE PHYSICS B,2018,27(4):5. |
APA | Chen, Zhiyu.,Wang, Ruifeng.,Wang, Guoyu.,Zhou, Xiaoyuan.,Wang, Zhengshang.,...&Ang, Ran.(2018).Band engineering and precipitation enhance thermoelectric performance of SnTe with Zn-doping.CHINESE PHYSICS B,27(4),5. |
MLA | Chen, Zhiyu,et al."Band engineering and precipitation enhance thermoelectric performance of SnTe with Zn-doping".CHINESE PHYSICS B 27.4(2018):5. |
入库方式: OAI收割
来源:重庆绿色智能技术研究院
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