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Force Drift in Force Mode Dip-Pen Nanolithography

文献类型：期刊论文

作者Yang, Haijun1,2; Zhang, Chen1,2; Zhang, Jinjin1,2; Zhang, Donghua1,2; Hu, Jun1,2; Han, Zhongkang1,2; Wang, Huabin3,4; Hou, Zhengchi1,2
刊名JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
出版日期2016-07-01
卷号16期号:7页码:7030-7036
关键词Dip-Pen Nanolithography (DPN) Atomic Force Microscopy (AFM) Force Drift
ISSN号1533-4880
DOI10.1166/jnn.2016.11311
通讯作者Hou, Z (reprint author), Chinese Acad Sci, Shanghai Inst Appl Phys, Div Interfacial Water, Shanghai 201800, Peoples R China. ; Hou, Z (reprint author), Chinese Acad Sci, Shanghai Inst Appl Phys, Key Lab Interfacial Phys & Technol, Shanghai 201800, Peoples R China. ; Wang, HB (reprint author), Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Ctr Terahertz Technol Res, Chongqing 400714, Peoples R China. ; Wang, HB (reprint author), Univ Melbourne, Sch Chem, Pakville, Vic 3010, Australia.
英文摘要Dip-pen nanolithography (DPN) is a widely employed technique in fabricating micro-and nanopatterns composed of biological molecules or other chemical materials. Force drift, a key factor affecting the force control, therefore the performance of DPN, is commonly happened in DPN. However, the underlying mechanism of force drift is not well understood yet. In this work, based on analyzing the force curve and tapping mode (TM) deflection signals varying with dwell time (i.e., the 'surface delay' period), the force drift during force mode dip-pen nanolithography (FMDPN) was studied in depth. For an open-loop atomic force microscope (AFM) scanner the force drift is about 30% of its preset value on a soft polydimethylsiloxane (PDMS) substrate while it can reach 400% on a rigid silicon wafer during the dwell time of 2 seconds. The creep effect of the scanner in the z direction determines the force drift and the thermal drift of AFM system is negligible in comparison with the preset loading force when the AFM system is stabilized. For a closed-loop scanner the loading force can nearly keep constant on either a soft PDMS substrate or a rigid silicon wafer during the whole dwell time due to the compensation for the creep effect of piezoelectric tube in the z direction of the AFM scanner. This study is helpful for properly employing DPN technique to fabricate micro-and nano-patterned structures on solid substrates.
资助项目NSFC[11105090] ; NSFC[11375252] ; Startup Foundation for Advanced Talents - CIGIT ; Chongqing Science and Technology Commission[cstc2013yykfC00007] ; Chongqing Science and Technology Commission[cstc2013jcyjC00001] ; Chinese Academy of Sciences (Key Scientific Instrument and Equipment Development Project)
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种英语
WOS记录号WOS:000387100400058
出版者AMER SCIENTIFIC PUBLISHERS
源URL[http://119.78.100.138/handle/2HOD01W0/3020]  
专题太赫兹技术研究中心
通讯作者Wang, Huabin; Hou, Zhengchi
作者单位1.Chinese Acad Sci, Shanghai Inst Appl Phys, Div Interfacial Water, Shanghai 201800, Peoples R China
2.Chinese Acad Sci, Shanghai Inst Appl Phys, Key Lab Interfacial Phys & Technol, Shanghai 201800, Peoples R China
3.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Ctr Terahertz Technol Res, Chongqing 400714, Peoples R China
4.Univ Melbourne, Sch Chem, Pakville, Vic 3010, Australia
推荐引用方式
GB/T 7714		 Yang, Haijun,Zhang, Chen,Zhang, Jinjin,et al. Force Drift in Force Mode Dip-Pen Nanolithography[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,2016,16(7):7030-7036.
APA Yang, Haijun.,Zhang, Chen.,Zhang, Jinjin.,Zhang, Donghua.,Hu, Jun.,...&Hou, Zhengchi.(2016).Force Drift in Force Mode Dip-Pen Nanolithography.JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,16(7),7030-7036.
MLA Yang, Haijun,et al."Force Drift in Force Mode Dip-Pen Nanolithography".JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 16.7(2016):7030-7036.

入库方式： OAI收割

来源：重庆绿色智能技术研究院

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