Effects of annealing temperature on the electrical property and microstructure of aluminum contact on n-type 3C-SiC
文献类型：期刊论文
| 作者 | Dai Chong-Chong1,2; Liu Xue-Chao1; Zhou Tian-Yu1,2; Zhuo Shi-Yi1; Shi Biao3 ; Shi Er-Wei1
|
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2014-06-01 |
| 卷号 | 23期号:6页码:5 |
| 关键词 | Al/3C-SiC ohmic contact specific contact resistance |
| ISSN号 | 1674-1056 |
| DOI | 10.1088/1674-1056/23/6/066803 |
| 通讯作者 | Liu, XC (reprint author), Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 201800, Peoples R China. |
| 英文摘要 | The 3C-SiC thin films used herein are grown on Si substrates by chemical vapor deposition. Al contacts with different thickness values are deposited on the 3C-SiC/Si (100) structure by the magnetron sputtering method and are annealed at different temperatures. We focus on the effects of the annealing temperature on the ohmic contact properties and microstructure of Al/3C-SiC structure. The electrical properties of Al contacts to n-type 3C-SiC are characterized by the transmission line method. The crystal structures and chemical phases of Al contacts are examined by X-ray diffraction, Raman spectra, and transmission electron microscopy, respectively. It is found that the Al contacts exhibit ohmic contact behaviors when the annealing temperature is below 550 degrees C, and they become Schottky contacts when the annealing temperature is above 650 degrees C. A minimum specific contact resistance of 1.8 x 10(-4) Omega.cm(2) is obtained when the Al contact is annealed at 250 degrees C. |
| 资助项目 | Shanghai Rising-Star Program, China[13QA1403800] ; Young Scientists Fund of the National Natural Science Foundation of China[51002176] ; Innovation Program of the Chinese Academy of Sciences[KJCX2-EW-W10] ; Industry-Academic Joint Technological Innovations Fund Project of Jiangsu Province, China[BY2011119] ; National High Technology Research and Development Program of China[2013AA031603] ; National High Technology Research and Development Program of China[2014AA032602] |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000338668200073 |
| 出版者 | IOP PUBLISHING LTD |
| 源URL | [http://119.78.100.138/handle/2HOD01W0/856]  |
| 专题 | 精准医疗单分子诊断技术研究中心 |
| 通讯作者 | Liu Xue-Chao |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 201800, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 401122, Peoples R China |
| 推荐引用方式 GB/T 7714 | Dai Chong-Chong,Liu Xue-Chao,Zhou Tian-Yu,et al. Effects of annealing temperature on the electrical property and microstructure of aluminum contact on n-type 3C-SiC[J]. CHINESE PHYSICS B,2014,23(6):5. |
| APA | Dai Chong-Chong,Liu Xue-Chao,Zhou Tian-Yu,Zhuo Shi-Yi,Shi Biao,&Shi Er-Wei.(2014).Effects of annealing temperature on the electrical property and microstructure of aluminum contact on n-type 3C-SiC.CHINESE PHYSICS B,23(6),5. |
| MLA | Dai Chong-Chong,et al."Effects of annealing temperature on the electrical property and microstructure of aluminum contact on n-type 3C-SiC".CHINESE PHYSICS B 23.6(2014):5. |
入库方式： OAI收割
来源：重庆绿色智能技术研究院
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