Divacancies induced ferromagnetism in 3C-SiC thin films
文献类型:期刊论文
作者 | Zhou, Ren-Wei1,2; Liu, Xue-Chao1; Zhuo, Shi-Yi1; Chen, Hong-Ming1,2; Shi, Biao3![]() |
刊名 | JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
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出版日期 | 2015 |
卷号 | 374页码:559-563 |
ISSN号 | 0304-8853 |
DOI | 10.1016/j.jmmm.2014.08.081 |
英文摘要 | 3C-SiC thin films were prepared by atmospheric pressure chemical vapor deposition. We performed a study on the effect of C/Si ratio on ferromagnetic properties and microstructures of 3C-SiC thin films. The 3C-SiC thin films show ferromagnetic behavior within the scope of C/Si ratio in our study. An initial increase in C/Si ratio leads to the enhancement of magnetization, while further increasing C/Si ratio reduces the magnetization. The ferromagnetism is associated with divacancy concentration in 3C-SiC thin films. Our study reveals that the ferromagnetism of 3C-SiC thin films is stable at room temperature, and this may be helpful for clarifying the current controversy of the ferromagnetism origin in diluted magnetism semiconductor. (C) 2014 Elsevier B.V. All rights reserved. |
语种 | 英语 |
WOS记录号 | WOS:000344949000090 |
源URL | [http://119.78.100.138/handle/2HOD01W0/4372] ![]() |
专题 | 精准医疗单分子诊断技术研究中心 |
作者单位 | 1.Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 201800, Peoples R China; 2.Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China; 3.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400700, Peoples R China |
推荐引用方式 GB/T 7714 | Zhou, Ren-Wei,Liu, Xue-Chao,Zhuo, Shi-Yi,et al. Divacancies induced ferromagnetism in 3C-SiC thin films[J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS,2015,374:559-563. |
APA | Zhou, Ren-Wei,Liu, Xue-Chao,Zhuo, Shi-Yi,Chen, Hong-Ming,Shi, Biao,&Shi, Er-Wei.(2015).Divacancies induced ferromagnetism in 3C-SiC thin films.JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS,374,559-563. |
MLA | Zhou, Ren-Wei,et al."Divacancies induced ferromagnetism in 3C-SiC thin films".JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 374(2015):559-563. |
入库方式: OAI收割
来源:重庆绿色智能技术研究院
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