Collection of charge in NMOS from single event effect
文献类型：期刊论文
| 作者 | Wang, Jingqiu1,2 ; Lin, Fujiang1; Wang, Donglin2; Song, Wenna2; Liu, Li2; Song, Qiwei2; Chen, Liang2
|
| 刊名 | IEICE ELECTRONICS EXPRESS
 |
| 出版日期 | 2016-04-25 |
| 卷号 | 13期号:8页码:1-8 |
| 关键词 | Single Event Effect Ultra Deep Sub-micron Double Exponential Transient Current Model Multi-dimensional |
| DOI | 10.1587/elex.13.20160014 |
| 文献子类 | Article |
| 英文摘要 | In aerospace environment, single event effect (SEE) will occur and single event transient (SET) current pulse will be induced in drain/source region of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) when high energy ion strikes semiconductor devices. The typical double exponential transient current model proposed for traditional technology is not suitable for ultra deep sub-micron technology devices. In this paper, a novel multi-dimensional double exponential transient current model is proposed based on our new understanding of ultra deep sub-micron radiation mechanism, which has been validated using Technology Computer Aided Design (TCAD) simulation. This model can be important basis for the searching of SEE at circuit level and can be transparently applied to evaluate the effectiveness and performance of hardening technique, thus shortening the developing cycle of integrated circuit intended to operate within aerospace environment. |
| WOS研究方向 | Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000377764100004 |
| 源URL | [http://ir.ia.ac.cn/handle/173211/12046]  |
| 专题 | 自动化研究所_国家专用集成电路设计工程技术研究中心 |
| 作者单位 | 1.Univ Sci & Technol China, Sch Informat Sci & Technol, Hefei 230026, Peoples R China 2.Chinese Acad Sci, Inst Automat, Natl ASIC Design Engn Ctr, Beijing 100190, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Jingqiu,Lin, Fujiang,Wang, Donglin,et al. Collection of charge in NMOS from single event effect[J]. IEICE ELECTRONICS EXPRESS,2016,13(8):1-8. |
| APA | Wang, Jingqiu.,Lin, Fujiang.,Wang, Donglin.,Song, Wenna.,Liu, Li.,...&Chen, Liang.(2016).Collection of charge in NMOS from single event effect.IEICE ELECTRONICS EXPRESS,13(8),1-8. |
| MLA | Wang, Jingqiu,et al."Collection of charge in NMOS from single event effect".IEICE ELECTRONICS EXPRESS 13.8(2016):1-8. |
入库方式： OAI收割
来源：自动化研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。