中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Reliability Oriented Selective Triple Modular Redundancy for SRAM-Based FPGAs

文献类型:期刊论文

作者Zheng, Meisong; Wang, Zilong; Tu, Ji; Wang, Junye; Li, Lijian
刊名Applied Mechanics and Materials
出版日期2014-11
期号713-715页码:1127-1131
关键词Fpga Tmr Windowing Seu
英文摘要This paper presents an improved approach to Triple Modular Redundancy (TMR) which concerns don’  t  care  bits  of  LUT  configuration bits and hence classifies the set of LUTs into SEU-sensitive and SEU-insensitive. Unlike the full TMR approach, the improved approach only
triplicates SEU-sensitive LUTs and can greatly reduces the area overhead while maintaining the circuit  reliability.  The  proposed  approach  is  thoroughly  tested  on  the  MCNC’91   benchmarks. Compare with the full TMR method the proposed scheme can reduce the area overhead by 26.6% on average, at the same time the circuit reliability only reduced by 9.1 %. The improved approach can also increase mean time between failures (MTBF) by an average of six times more than the original circuit.   
源URL[http://ir.ia.ac.cn/handle/173211/11751]  
专题自动化研究所_空天信息研究中心
通讯作者Li, Lijian
作者单位中国科学院自动化研究所
推荐引用方式
GB/T 7714
Zheng, Meisong,Wang, Zilong,Tu, Ji,et al. Reliability Oriented Selective Triple Modular Redundancy for SRAM-Based FPGAs[J]. Applied Mechanics and Materials,2014(713-715):1127-1131.
APA Zheng, Meisong,Wang, Zilong,Tu, Ji,Wang, Junye,&Li, Lijian.(2014).Reliability Oriented Selective Triple Modular Redundancy for SRAM-Based FPGAs.Applied Mechanics and Materials(713-715),1127-1131.
MLA Zheng, Meisong,et al."Reliability Oriented Selective Triple Modular Redundancy for SRAM-Based FPGAs".Applied Mechanics and Materials .713-715(2014):1127-1131.

入库方式: OAI收割

来源:自动化研究所

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