First-principles theory of tunneling currents in metal-oxide-semiconductor structures
文献类型：期刊论文
| 作者 | Zhang, X. -G.; Lu, Zhong-Yi; Pantelides, Sokrates T.; Zhang, XG , Oak Ridge Natl Lab, Ctr Nanophys Mat Sci, Oak Ridge, TN 37831 USA |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2006 |
| 卷号 | 89期号:3页码:- |
| 关键词 | Ultrathin Gate Oxides Band-structure Electron-gas States Junctions Formula |
| ISSN号 | 0003-6951 |
| 英文摘要 | Ultrathin gate-oxide films and alternate dielectrics call for accurate modeling of tunneling currents. Available models, based on the effective-mass approximation, yield good fits to finite-bias data, but fail for infinitesimal biases. Here we report a first-principles theory of tunneling currents. We show that the conductance at infinitesimal bias is a ground-state property and can be calculated accurately using density-functional theory and the local-density approximation for exchange and correlation. At finite biases, a discontinuity in the exchange-correlation potential must be properly included. Challenges for both theory and experiments are identified. (c) 2006 American Institute of Physics. |
| 学科主题 | Physics |
| URL标识 | 查看原文 |
| WOS记录号 | WOS:000239174100063 |
| 公开日期 | 2012-08-02 |
| 源URL | [http://ir.itp.ac.cn/handle/311006/5946]  |
| 专题 | 理论物理研究所_理论物理所1978-2010年知识产出 |
| 通讯作者 | Zhang, XG , Oak Ridge Natl Lab, Ctr Nanophys Mat Sci, Oak Ridge, TN 37831 USA |
| 推荐引用方式 GB/T 7714 | Zhang, X. -G.,Lu, Zhong-Yi,Pantelides, Sokrates T.,et al. First-principles theory of tunneling currents in metal-oxide-semiconductor structures[J]. APPLIED PHYSICS LETTERS,2006,89(3):-. |
| APA | Zhang, X. -G.,Lu, Zhong-Yi,Pantelides, Sokrates T.,&Zhang, XG , Oak Ridge Natl Lab, Ctr Nanophys Mat Sci, Oak Ridge, TN 37831 USA.(2006).First-principles theory of tunneling currents in metal-oxide-semiconductor structures.APPLIED PHYSICS LETTERS,89(3),-. |
| MLA | Zhang, X. -G.,et al."First-principles theory of tunneling currents in metal-oxide-semiconductor structures".APPLIED PHYSICS LETTERS 89.3(2006):-. |
入库方式： OAI收割
来源：理论物理研究所
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