Mesoscopic kondo screening effect in a single-electron transistor embedded in a metallic ring
文献类型:期刊论文
作者 | Hu, H , Tsing Hua Univ, Dept Phys, Beijing 100084, Peoples R China.; Hu, H; Zhang, GM; Yu, L![]() |
刊名 | PHYSICAL REVIEW LETTERS
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出版日期 | 2001 |
卷号 | 86期号:24页码:5558-5561 |
关键词 | Quantum-dot Impurity |
ISSN号 | 0031-9007 |
英文摘要 | We study the Kondo screening effect generated by a single-electron transistor or quantum dot embedded in a small metallic ring. When the ring circumference L becomes comparable to the fundamental length scale xi (0)(K) = h(upsilonF)/T-K(0) associated with the bulk Kondo temperature, the Kondo resonance is strongly affected, depending on the total number of electrons (mod4) and magnetic flux threading the ring. The resulting Kondo-assisted persistent currents are also calculated in both Kondo and mixed-valence regimes, and the maximum values are found in the crossover region. |
学科主题 | Physics |
URL标识 | 查看原文 |
WOS记录号 | WOS:000169239500038 |
公开日期 | 2012-08-29 |
源URL | [http://ir.itp.ac.cn/handle/311006/12727] ![]() |
专题 | 理论物理研究所_理论物理所1978-2010年知识产出 |
通讯作者 | Hu, H , Tsing Hua Univ, Dept Phys, Beijing 100084, Peoples R China. |
推荐引用方式 GB/T 7714 | Hu, H , Tsing Hua Univ, Dept Phys, Beijing 100084, Peoples R China.,Hu, H,Zhang, GM,et al. Mesoscopic kondo screening effect in a single-electron transistor embedded in a metallic ring[J]. PHYSICAL REVIEW LETTERS,2001,86(24):5558-5561. |
APA | Hu, H , Tsing Hua Univ, Dept Phys, Beijing 100084, Peoples R China.,Hu, H,Zhang, GM,&Yu, L.(2001).Mesoscopic kondo screening effect in a single-electron transistor embedded in a metallic ring.PHYSICAL REVIEW LETTERS,86(24),5558-5561. |
MLA | Hu, H , Tsing Hua Univ, Dept Phys, Beijing 100084, Peoples R China.,et al."Mesoscopic kondo screening effect in a single-electron transistor embedded in a metallic ring".PHYSICAL REVIEW LETTERS 86.24(2001):5558-5561. |
入库方式: OAI收割
来源:理论物理研究所
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