中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor-cavity QED in high-Q regimes with q-deformed bosons

文献类型:期刊论文

作者Liu, YX; Sun, CP; Yu, SX; Zhou, DL; Liu, YX , Acad Sinica, Inst Theoret Phys, POB 2735, Beijing 100080, Peoples R China.
刊名PHYSICAL REVIEW A
出版日期2001
卷号63期号:2页码:-
关键词Conserving Bogoliubov Method Gross-pitaevskii Equation Condensed Bose-gas Frenkel Excitons Superradiance Validity Systems Model
ISSN号1050-2947
英文摘要The high-density Frenkel excitons, which interact with a single-mode cavity field, are investigated in the framework of the q-deformed boson. It is shown that the q-deformed bosonic commutation relations are satisfied naturally by the exciton operators in the high-density limit. An analytical expression of the physical spectra of the excitons is obtained by using the dressed states of the cavity field and the excitons. We also give the numerical study and compare the theoretical results with the experimental results.
学科主题Physics
WOS记录号WOS:000166867900100
公开日期2012-08-29
源URL[http://ir.itp.ac.cn/handle/311006/12821]  
专题理论物理研究所_理论物理所1978-2010年知识产出
通讯作者Liu, YX , Acad Sinica, Inst Theoret Phys, POB 2735, Beijing 100080, Peoples R China.
推荐引用方式
GB/T 7714
Liu, YX,Sun, CP,Yu, SX,et al. Semiconductor-cavity QED in high-Q regimes with q-deformed bosons[J]. PHYSICAL REVIEW A,2001,63(2):-.
APA Liu, YX,Sun, CP,Yu, SX,Zhou, DL,&Liu, YX , Acad Sinica, Inst Theoret Phys, POB 2735, Beijing 100080, Peoples R China..(2001).Semiconductor-cavity QED in high-Q regimes with q-deformed bosons.PHYSICAL REVIEW A,63(2),-.
MLA Liu, YX,et al."Semiconductor-cavity QED in high-Q regimes with q-deformed bosons".PHYSICAL REVIEW A 63.2(2001):-.

入库方式: OAI收割

来源:理论物理研究所

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