Electron space charge effect on spin injection into semiconductors
文献类型:期刊论文
作者 | Yu, Y![]() |
刊名 | PHYSICAL REVIEW B
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出版日期 | 2003 |
卷号 | 67期号:19页码:- |
关键词 | Tunnel-junctions Room-temperature Magnetoresistance Ferromagnet Transport Gaas |
ISSN号 | 1098-0121 |
英文摘要 | We consider spin polarized transport in a ferromagnet-insulator/semiconductor/insulator-ferromagnet junction. We find that the spin current is strongly dependent on the spin configurations, the doping, and space charge distribution in the semiconductor. When the ferromagnet-semiconductor interface resistance is comparable to the semiconductor resistance, the magnetoresistance ratio of this junction can be greatly enhanced under appropriate doping when the space charge effect in the nonequilibrium transport processes is taken into consideration. |
学科主题 | Physics |
URL标识 | 查看原文 |
WOS记录号 | WOS:000183380000007 |
公开日期 | 2012-08-29 |
源URL | [http://ir.itp.ac.cn/handle/311006/13295] ![]() |
专题 | 理论物理研究所_理论物理所1978-2010年知识产出 |
通讯作者 | Yu, Y , Chinese Acad Sci, Inst Theoret Phys, POB 2735, Beijing 100080, Peoples R China. |
推荐引用方式 GB/T 7714 | Yu, Y,Li, JB,Chui, ST,et al. Electron space charge effect on spin injection into semiconductors[J]. PHYSICAL REVIEW B,2003,67(19):-. |
APA | Yu, Y,Li, JB,Chui, ST,&Yu, Y , Chinese Acad Sci, Inst Theoret Phys, POB 2735, Beijing 100080, Peoples R China..(2003).Electron space charge effect on spin injection into semiconductors.PHYSICAL REVIEW B,67(19),-. |
MLA | Yu, Y,et al."Electron space charge effect on spin injection into semiconductors".PHYSICAL REVIEW B 67.19(2003):-. |
入库方式: OAI收割
来源:理论物理研究所
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