中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Electron space charge effect on spin injection into semiconductors

文献类型:期刊论文

作者Yu, Y; Li, JB; Chui, ST; Yu, Y , Chinese Acad Sci, Inst Theoret Phys, POB 2735, Beijing 100080, Peoples R China.
刊名PHYSICAL REVIEW B
出版日期2003
卷号67期号:19页码:-
关键词Tunnel-junctions Room-temperature Magnetoresistance Ferromagnet Transport Gaas
ISSN号1098-0121
英文摘要We consider spin polarized transport in a ferromagnet-insulator/semiconductor/insulator-ferromagnet junction. We find that the spin current is strongly dependent on the spin configurations, the doping, and space charge distribution in the semiconductor. When the ferromagnet-semiconductor interface resistance is comparable to the semiconductor resistance, the magnetoresistance ratio of this junction can be greatly enhanced under appropriate doping when the space charge effect in the nonequilibrium transport processes is taken into consideration.
学科主题Physics
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WOS记录号WOS:000183380000007
公开日期2012-08-29
源URL[http://ir.itp.ac.cn/handle/311006/13295]  
专题理论物理研究所_理论物理所1978-2010年知识产出
通讯作者Yu, Y , Chinese Acad Sci, Inst Theoret Phys, POB 2735, Beijing 100080, Peoples R China.
推荐引用方式
GB/T 7714
Yu, Y,Li, JB,Chui, ST,et al. Electron space charge effect on spin injection into semiconductors[J]. PHYSICAL REVIEW B,2003,67(19):-.
APA Yu, Y,Li, JB,Chui, ST,&Yu, Y , Chinese Acad Sci, Inst Theoret Phys, POB 2735, Beijing 100080, Peoples R China..(2003).Electron space charge effect on spin injection into semiconductors.PHYSICAL REVIEW B,67(19),-.
MLA Yu, Y,et al."Electron space charge effect on spin injection into semiconductors".PHYSICAL REVIEW B 67.19(2003):-.

入库方式: OAI收割

来源:理论物理研究所

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