Beating patterns in the oscillatory magnetoresistance of a Si modulation-doped AlGaN/GaN heterostructure
文献类型：期刊论文
| 作者 | Chu, JH; Yao, W; Qiu, ZJ; Gui, YS; Zheng, ZW; Lu, J; Tang, N; Shen, B; Chu, JH , Chinese Acad Sci, Shanghai Inst Theoret Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China. |
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2005 |
| 卷号 | 54期号:5页码:2247-2251 |
| 关键词 | Alxga1-xn/gan Heterostructures Intersubband Scattering Electron-gas Heterojunctions |
| ISSN号 | 1000-3290 |
| 英文摘要 | Magneto-transport measurements have been carried out on a Si modulation-doped Al0.22Ga0.78 N/GaN heterostructure in a temperature range between 1.5 and 25 K under magnetic field up to 10T. Striking beating patterns in magnetoresistance vs magnetic field are observed in the vicinity of a specific temperature. Theoretical simulation is performed and the comparison between numerical simulations and the experimental data reveals that the beating patterns are due to the interference of the magneto-intersubband scattering and the SdH oscillator of first subband. |
| 学科主题 | Physics |
| 公开日期 | 2012-08-30 |
| 源URL | [http://ir.itp.ac.cn/handle/311006/13827]  |
| 专题 | 理论物理研究所_理论物理所1978-2010年知识产出 |
| 通讯作者 | Chu, JH , Chinese Acad Sci, Shanghai Inst Theoret Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Chu, JH,Yao, W,Qiu, ZJ,et al. Beating patterns in the oscillatory magnetoresistance of a Si modulation-doped AlGaN/GaN heterostructure[J]. ACTA PHYSICA SINICA,2005,54(5):2247-2251. |
| APA | Chu, JH.,Yao, W.,Qiu, ZJ.,Gui, YS.,Zheng, ZW.,...&Chu, JH , Chinese Acad Sci, Shanghai Inst Theoret Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China..(2005).Beating patterns in the oscillatory magnetoresistance of a Si modulation-doped AlGaN/GaN heterostructure.ACTA PHYSICA SINICA,54(5),2247-2251. |
| MLA | Chu, JH,et al."Beating patterns in the oscillatory magnetoresistance of a Si modulation-doped AlGaN/GaN heterostructure".ACTA PHYSICA SINICA 54.5(2005):2247-2251. |
入库方式： OAI收割
来源：理论物理研究所
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