Spontaneous Formation of a Superconductor-Topological Insulator-Normal Metal Layered Heterostructure
文献类型:期刊论文
作者 | Guo, HM; Nie, SM; Chen, GF; Zhu, SY; Wang, JO; Lei, T; Shao, Y; Wang, YL; Wu, X; Wang, YQ |
刊名 | ADVANCED MATERIALS
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出版日期 | 2016 |
卷号 | 28期号:25页码:5013-5017 |
DOI | 10.1002/adma.201600575 |
英文摘要 | 2D materials with heterolayered structures beyond graphene are explored. A theoretically predicted superconductor-topological insulator-normal metal heterolayered structure is realized experimentally. The generated hybrid structure HfTe3/HfTe5/Hf has potential applications in both quantum-spin Hall effect-based and Majorana-based devices. |
语种 | 英语 |
WOS记录号 | WOS:000378940100007 |
源URL | [http://ir.ihep.ac.cn/handle/311005/260312] ![]() |
专题 | 中国科学院高能物理研究所 |
作者单位 | 中国科学院高能物理研究所 |
推荐引用方式 GB/T 7714 | Guo, HM,Nie, SM,Chen, GF,et al. Spontaneous Formation of a Superconductor-Topological Insulator-Normal Metal Layered Heterostructure[J]. ADVANCED MATERIALS,2016,28(25):5013-5017. |
APA | Guo, HM.,Nie, SM.,Chen, GF.,Zhu, SY.,Wang, JO.,...&Zhao, LX.(2016).Spontaneous Formation of a Superconductor-Topological Insulator-Normal Metal Layered Heterostructure.ADVANCED MATERIALS,28(25),5013-5017. |
MLA | Guo, HM,et al."Spontaneous Formation of a Superconductor-Topological Insulator-Normal Metal Layered Heterostructure".ADVANCED MATERIALS 28.25(2016):5013-5017. |
入库方式: OAI收割
来源:高能物理研究所
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