中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Spontaneous Formation of a Superconductor-Topological Insulator-Normal Metal Layered Heterostructure

文献类型:期刊论文

作者Guo, HM; Nie, SM; Chen, GF; Zhu, SY; Wang, JO; Lei, T; Shao, Y; Wang, YL; Wu, X; Wang, YQ
刊名ADVANCED MATERIALS
出版日期2016
卷号28期号:25页码:5013-5017
DOI10.1002/adma.201600575
英文摘要2D materials with heterolayered structures beyond graphene are explored. A theoretically predicted superconductor-topological insulator-normal metal heterolayered structure is realized experimentally. The generated hybrid structure HfTe3/HfTe5/Hf has potential applications in both quantum-spin Hall effect-based and Majorana-based devices.
语种英语
WOS记录号WOS:000378940100007
源URL[http://ir.ihep.ac.cn/handle/311005/260312]  
专题中国科学院高能物理研究所
作者单位中国科学院高能物理研究所
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GB/T 7714
Guo, HM,Nie, SM,Chen, GF,et al. Spontaneous Formation of a Superconductor-Topological Insulator-Normal Metal Layered Heterostructure[J]. ADVANCED MATERIALS,2016,28(25):5013-5017.
APA Guo, HM.,Nie, SM.,Chen, GF.,Zhu, SY.,Wang, JO.,...&Zhao, LX.(2016).Spontaneous Formation of a Superconductor-Topological Insulator-Normal Metal Layered Heterostructure.ADVANCED MATERIALS,28(25),5013-5017.
MLA Guo, HM,et al."Spontaneous Formation of a Superconductor-Topological Insulator-Normal Metal Layered Heterostructure".ADVANCED MATERIALS 28.25(2016):5013-5017.

入库方式: OAI收割

来源:高能物理研究所

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