Effects of Implantation Sequence on the Micro-defects in H and O Implanted Silicon
文献类型：期刊论文
| 作者 | Wang, BY; Zhang P(张鹏); Cao XZ(曹兴忠) ; Wang BY(王宝义); Wang, Z; Yang, L; Zhang, LZ; Shi, SB; Zhang, P; Cao, XZ
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| 刊名 | JOURNAL OF ELECTRONIC MATERIALS
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| 出版日期 | 2016 |
| 卷号 | 45期号:10页码:5064-5068 |
| 关键词 | Platelet cavity H implantation silicon |
| DOI | 10.1007/s11664-016-4698-8 |
| 英文摘要 | Cz n-type Si (100) wafers are implanted with 190 keV O and 40 keV H ions in different implantation sequences. Cross sectional transmission electron microscopy and slow positron annihilation spectroscopy are used to study the formation and evolution of micro-defects. Our results clearly show that the defect morphology depends strongly on the implantation sequence. Large cavities are observed in O preimplanted samples, while only platelets are observed in H preimplanted samples. The change regularity of the S parameter is the same for the Si samples co-implanted at different sequences. But in H preimplanted samples, the S parameter is a little higher. The effects of the implantation sequence on the micro-defects have been discussed in combination with H and O implantation-induced defects as well as their interactions upon annealing. |
| 语种 | 英语 |
| WOS记录号 | WOS:000382585400048 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/260315]  |
| 专题 | 中国科学院高能物理研究所 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Wang, BY,Zhang P,Cao XZ,et al. Effects of Implantation Sequence on the Micro-defects in H and O Implanted Silicon[J]. JOURNAL OF ELECTRONIC MATERIALS,2016,45(10):5064-5068. |
| APA | Wang, BY.,张鹏.,曹兴忠.,王宝义.,Wang, Z.,...&Cao, XZ.(2016).Effects of Implantation Sequence on the Micro-defects in H and O Implanted Silicon.JOURNAL OF ELECTRONIC MATERIALS,45(10),5064-5068. |
| MLA | Wang, BY,et al."Effects of Implantation Sequence on the Micro-defects in H and O Implanted Silicon".JOURNAL OF ELECTRONIC MATERIALS 45.10(2016):5064-5068. |
入库方式： OAI收割
来源：高能物理研究所
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