Observation of van Hove Singularities in Twisted Silicene Multilayers
文献类型:期刊论文
作者 | Li, Z; Zhuang, JC; Chen, L; Ni, ZY; Liu, C; Wang, L; Xu, X; Wang, JO; Pi, XD; Wang, XL |
刊名 | ACS CENTRAL SCIENCE
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出版日期 | 2016 |
卷号 | 2期号:8页码:517-521 |
DOI | 10.1021/acscentsci.6b00152 |
文献子类 | 期刊论文 |
英文摘要 | Interlayer interactions perturb the electronic structure of two-dimensional materials and lead to new physical phenomena, such as van Hove singularities and Hofstadter's butterfly pattern. Silicene, the recently discovered two-dimensional form of silicon, is quite unique, in that silicon atoms adopt competing sp(2) and sp(3) hybridization states leading to a low-buckled structure promising relatively strong interlayer interaction. In multilayer silicene, the stacking order provides an important yet rarely explored degree of freedom for tuning its electronic structures through manipulating interlayer coupling. Here, we report the emergence of van Hove singularities in the multilayer silicene created by an interlayer rotation. We demonstrate that even a large-angle rotation (>20 degrees) between stacked silicene layers can generate a Moire pattern and van Hove singularities due to the strong interlayer coupling in multilayer silicene. Our study suggests an intriguing method for expanding the tunability of the electronic structure for electronic applications in this two-dimensional material. |
WOS关键词 | AUGMENTED-WAVE METHOD ; GRAPHENE ; AG(111) |
语种 | 英语 |
WOS记录号 | WOS:000384750300008 |
源URL | [http://ir.ihep.ac.cn/handle/311005/260386] ![]() |
专题 | 高能物理研究所_多学科研究中心 |
作者单位 | 中国科学院高能物理研究所 |
推荐引用方式 GB/T 7714 | Li, Z,Zhuang, JC,Chen, L,et al. Observation of van Hove Singularities in Twisted Silicene Multilayers[J]. ACS CENTRAL SCIENCE,2016,2(8):517-521. |
APA | Li, Z.,Zhuang, JC.,Chen, L.,Ni, ZY.,Liu, C.,...&王嘉鸥.(2016).Observation of van Hove Singularities in Twisted Silicene Multilayers.ACS CENTRAL SCIENCE,2(8),517-521. |
MLA | Li, Z,et al."Observation of van Hove Singularities in Twisted Silicene Multilayers".ACS CENTRAL SCIENCE 2.8(2016):517-521. |
入库方式: OAI收割
来源:高能物理研究所
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