Tunable Electronic Structures in Wrinkled 2D Transition-Metal-Trichalcogenide (TMT) HfTe3 Films
文献类型：期刊论文
| 作者 | Wang, YQ; Wu, X; Ge, YF; Wang, YL; Guo, HM; Shao, Y; Lei, T; Liu, C; Wang, JO; Zhu, SY |
| 刊名 | ADVANCED ELECTRONIC MATERIALS
 |
| 出版日期 | 2016 |
| 卷号 | 2期号:12 |
| DOI | 10.1002/aelm.201600324 |
| 文献子类 | 期刊论文 |
| 英文摘要 | 2D materials with anisotropic symmetry are likely, in general, to possess strain that is artificially adjustable in a single direction, inspiring strategies of artificial regulation of local structures and related properties. Herein, strain-induced wrinkles in an anisotropic 2D transition-metal-trichalcogenide HfTe3 film are fabricated and illustrated for the first time. The corresponding localized electronic structures in the 1D corrugated wrinkles are revealed by a combination of experiment and simulation. The wrinkled HfTe3 film probably features electrical transport properties never before seen and useful for developing wrinkle-based heterojunctions for novel nanoelectronic devices. |
| WOS关键词 | RAMAN-SPECTROSCOPY ; GRAPHENE ; STRAIN ; SEMICONDUCTOR |
| 语种 | 英语 |
| WOS记录号 | WOS:000392939300011 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/260403]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Wang, YQ,Wu, X,Ge, YF,et al. Tunable Electronic Structures in Wrinkled 2D Transition-Metal-Trichalcogenide (TMT) HfTe3 Films[J]. ADVANCED ELECTRONIC MATERIALS,2016,2(12). |
| APA | Wang, YQ.,Wu, X.,Ge, YF.,Wang, YL.,Guo, HM.,...&奎热西.(2016).Tunable Electronic Structures in Wrinkled 2D Transition-Metal-Trichalcogenide (TMT) HfTe3 Films.ADVANCED ELECTRONIC MATERIALS,2(12). |
| MLA | Wang, YQ,et al."Tunable Electronic Structures in Wrinkled 2D Transition-Metal-Trichalcogenide (TMT) HfTe3 Films".ADVANCED ELECTRONIC MATERIALS 2.12(2016). |
入库方式： OAI收割
来源：高能物理研究所
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