The pressure-induced metallization of monoclinic vanadium dioxide
文献类型：期刊论文
| 作者 | Zhang, HF; Li, QJ; Cheng, BY; Guan, Z; Liu, R; Liu, B; Liu, ZX; Li, XD; Cui, T; Liu, BB |
| 刊名 | RSC ADVANCES
 |
| 出版日期 | 2016 |
| 卷号 | 6期号:107页码:104949-104954 |
| DOI | 10.1039/C6RA24084D |
| 英文摘要 | In this study, the high-pressure behavior of monoclinic vanadium dioxide (VO2 (M-1)) was revisited using infrared reflectivity (IR) spectroscopy, Raman spectroscopy and in situ synchrotron X-ray diffraction (XRD) up to 64.7 GPa. Upon compression, VO2 (M-1) follows the expected the structure transition sequence, M-1 -> M'(1) -> X, and we found that the structural transition from M'(1) to X phase is completed at about 59 GPa. Moreover, our IR data demonstrated that the M'(1) phase is a semiconductor within the pressure region of 11.4-43.2 GPa and became metallic with further compression, and that the X phase is metallic. Further analysis suggests that the pressure-induced metallization (PIM) of the M'(1) phase is associated with electron-electron correlations, while the PIM from the M'(1) to the X phases is relate to structural phase transitions. These results provide further insight into the PIM of VO2(M-1). |
| 语种 | 英语 |
| WOS记录号 | WOS:000388116500001 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/260419]  |
| 专题 | 中国科学院高能物理研究所 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Zhang, HF,Li, QJ,Cheng, BY,et al. The pressure-induced metallization of monoclinic vanadium dioxide[J]. RSC ADVANCES,2016,6(107):104949-104954. |
| APA | Zhang, HF.,Li, QJ.,Cheng, BY.,Guan, Z.,Liu, R.,...&李晓东.(2016).The pressure-induced metallization of monoclinic vanadium dioxide.RSC ADVANCES,6(107),104949-104954. |
| MLA | Zhang, HF,et al."The pressure-induced metallization of monoclinic vanadium dioxide".RSC ADVANCES 6.107(2016):104949-104954. |
入库方式： OAI收割
来源：高能物理研究所
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